Publication Information

Title: AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Type: Journal

Info: J. Electron Dev. Soc 6, 110 (2018)

Date: 2017-11-28

DOI: http://dx.doi.org/10.1109/JEDS.2017.2779172

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

Universiti Kebangsaan Malaysia

Universiti Kebangsaan Malaysia

National Chiao Tung University

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Deposition Temperature = 250C

75-24-1

7732-18-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Transistor Characteristics

Transistor Characterization

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Substrates

AlGaN

Keywords

Notes

1063



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