AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
Type:
Journal
Info:
J. Electron Dev. Soc 6, 110 (2018)
Date:
2017-11-28
Author Information
| Name | Institution |
|---|---|
| Huan-Chung Wang | National Chiao Tung University |
| Ting-En Hsieh | National Chiao Tung University |
| Yueh Chin Lin | National Chiao Tung University |
| Quang Ho Luc | National Chiao Tung University |
| Shih-Chien Liu | National Chiao Tung University |
| Chia-Hsun Wu | National Chiao Tung University |
| Chang Fu Dee | Universiti Kebangsaan Malaysia |
| Burhanuddin Y. Majlis | Universiti Kebangsaan Malaysia |
| Edward Yi Chang | National Chiao Tung University |
Films
Thermal Al2O3
Other Al2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| AlGaN |
Notes
| 1063 |