Publication Information

Title:
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
Type:
Journal
Info:
J. Electron Dev. Soc 6, 110 (2018)
Date:
2017-11-28

Author Information

Name Institution
Huan-Chung WangNational Chiao Tung University
Ting-En HsiehNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Quang Ho LucNational Chiao Tung University
Shih-Chien LiuNational Chiao Tung University
Chia-Hsun WuNational Chiao Tung University
Chang Fu DeeUniversiti Kebangsaan Malaysia
Burhanuddin Y. MajlisUniversiti Kebangsaan Malaysia
Edward Yi ChangNational Chiao Tung University

Films

Thermal Al2O3


Other Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

AlGaN

Keywords

Notes

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