Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Type:
Journal
Info:
IEEE Transactions on Electron Devices (Volume:61, Issue:8)
Date:
2015-06-19
DOI:
http://dx.doi.org/10.1109/TED.2014.2329479

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University
H. D. TrinhNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
H. Q. NguyenNational Chiao Tung University
Yuen-Yee WongNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
S. SalahuddinNational Chiao Tung University
Chenming Calvin HuUniversity of California - Berkeley

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

InGaAs

Notes

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