Publication Information

Title: Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Type: Journal

Info: IEEE Transactions on Electron Devices (Volume:61, Issue:8)

Date: 2015-06-19

DOI: http://dx.doi.org/10.1109/TED.2014.2329479

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

University of California - Berkeley

Films

Plasma AlN using Unknown

Deposition Temperature = 250C

75-24-1

7664-41-7

Plasma Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

-

Hysteresis

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

InGaAs

Keywords

Passivation

Notes

557



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