Publication Information

Title:
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Type:
Journal
Info:
IEEE Transactions on Electron Devices (Volume:61, Issue:8)
Date:
2015-06-19

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University
H. D. TrinhNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
H. Q. NguyenNational Chiao Tung University
Yuen-Yee WongNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
S. SalahuddinNational Chiao Tung University
Chenming Calvin HuUniversity of California - Berkeley

Films

Plasma AlN


Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

InGaAs

Keywords

Passivation

Notes

557