| 1 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 2 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
| 3 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 4 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 5 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 6 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 7 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 8 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 9 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 10 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 11 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 12 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 13 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 14 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 15 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 16 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 17 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 18 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 19 | Atomic layer deposition of titanium nitride for quantum circuits |
| 20 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 21 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 22 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 23 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 24 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 25 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 26 | Fully CMOS-compatible titanium nitride nanoantennas |
| 27 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 28 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 29 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 30 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 31 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 32 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 33 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 34 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 35 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 36 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 37 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 38 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 39 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 40 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 41 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 42 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 43 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 44 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 45 | Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films |
| 46 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 47 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 48 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 49 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 50 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 51 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 52 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 53 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 54 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 55 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 56 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 57 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 58 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 59 | Biofilm prevention on cochlear implants |
| 60 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 61 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 62 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
| 63 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 64 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 65 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 66 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
| 67 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 68 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 69 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 70 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 71 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 72 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
| 73 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
| 74 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
| 75 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 76 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 77 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
| 78 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
| 79 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 80 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 81 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 82 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 83 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
| 84 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 85 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 86 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 87 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 88 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
| 89 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 90 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 91 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
| 92 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 93 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 94 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
| 95 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 96 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 97 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 98 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 99 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 100 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 101 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 102 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 103 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 104 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |