Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (10), pp 7316-7324
Date:
2014-04-29
Author Information
| Name | Institution |
|---|---|
| Delphine Longrie | Ghent University |
| Davy Deduytsche | Ghent University |
| Jo Haemers | Ghent University |
| Philippe F. Smet | Ghent University |
| Kris Driesen | Umicore |
| Christophe Detavernier | Ghent University |
Films
Thermal TiN
Plasma TiN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Resistivity Meter
Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field
Substrates
| ZnO |
Notes
| Custom rotary PEALD and thermal ALD TiN on particles. |
| 279 |