2021 Year in Review

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Tailoring angular selectivity in SiO₂ slanted columnar thin films using atomic layer deposition of titanium nitride Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition

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272 Precursors and Plasma Gases

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250 Film and Plasma Characteristics

TiN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TiN films returned 119 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A high-density carbon fiber neural recording array technology
2	A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
3	ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
4	ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
5	ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
6	Annealing behavior of ferroelectric Si-doped HfO₂ thin films
7	Antioxidation properties of Ti_0.83Al_0.17N prepared using plasma-enhanced atomic layer deposition
8	Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
9	Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
10	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
11	Atomic layer deposition of Ru from CpRu(CO)₂Et using O₂ gas and O₂ plasma
12	Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
13	Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
14	Atomic Layer Deposition of TiN/Al₂O₃/TiN Nanolaminates for Capacitor Applications
15	Atomic layer deposition of titanium nitride for quantum circuits
16	Atomic layer deposition of titanium nitride from TDMAT precursor
17	Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
18	Bipolar Resistive Switching Characteristics of HfO₂/TiO₂/HfO₂ Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
19	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
20	Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
21	Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
22	Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
23	Conformal Formation of (GeTe₂)_(1-x)(Sb₂Te₃)_x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
24	Controllable nitrogen doping in as deposited TiO₂ film and its effect on post deposition annealing
25	Controlling the composition of Ti_1-xAl_xN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
26	Damage free Ar ion plasma surface treatment on In_0.53Ga_0.47As-on-silicon metal-oxide-semiconductor device
27	Deposition of TiN and HfO₂ in a commercial 200 mm remote plasma atomic layer deposition reactor
28	DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
29	Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
30	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
31	Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
32	Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
33	Electron Transport Across Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂ Films on Si
34	Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
35	Excellent resistive switching properties of atomic layer-deposited Al₂O₃/HfO₂/Al₂O₃ trilayer structures for non-volatile memory applications
36	Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
37	Fabrication and deformation of three-dimensional hollow ceramic nanostructures
38	Fabrication of Highly Ordered and Well-Aligned PbTiO₃/TiN Core-Shell Nanotube Arrays
39	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO₂/TiN stacks
40	Film Uniformity in Atomic Layer Deposition
41	Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
42	Fully CMOS BEOL compatible HfO₂ RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
43	Fully CMOS-compatible titanium nitride nanoantennas
44	Fundamental beam studies of radical enhanced atomic layer deposition of TiN
45	Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
46	High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
47	Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
48	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl₄/NH₃ System
49	Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
50	In situ dry cleaning of Si wafer using OF₂/NH₃ remote plasma with low global warming potential
51	In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
52	In_0.53Ga_0.47As FinFET and GAA-FET With Remote-Plasma Treatment
53	Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl₄ and N₂/H₂/Ar radicals
54	Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
55	Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
56	Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH₃-Ar-H₂ plasma treatment for capacitor electrodes
57	Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
58	Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
59	Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
60	Mechanical characterization of hollow ceramic nanolattices
61	Microwave properties of superconducting atomic-layer deposited TiN films
62	New materials for memristive switching
63	NiCO₂O₄@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
64	Nitride memristors
65	Non-destructive acoustic metrology and void detection in 3x50μm TSV
66	Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
67	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
68	Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
69	Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
70	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
71	Plasma Enhanced Atomic Layer Deposition of Al₂O₃ and TiN
72	Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH₃
73	Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
74	Plasma Enhanced Atomic Layer Deposition on Powders
75	Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
76	Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
77	Plasma-assisted atomic layer deposition of TiN/Al₂O₃ stacks for metal-oxide-semiconductor capacitor applications
78	Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl₄ , SiH₄, and N₂/H₂/Ar Plasma
79	Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
80	Plasma-enhanced atomic layer deposition for plasmonic TiN
81	Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
82	Plasma-enhanced atomic layer deposition of TiC_x films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
83	Plasma-enhanced atomic layer deposition of titanium vanadium nitride
84	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
85	Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
86	Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
87	Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
88	Protective capping and surface passivation of III-V nanowires by atomic layer deposition
89	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
90	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
91	Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
92	Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
93	Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH₃ Plasma
94	Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
95	Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
96	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
97	Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
98	Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
99	Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
100	Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
101	Silicon nanowire networks for multi-stage thermoelectric modules
102	Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
103	Stuffing-enabled surface confinement of silanes used as sealing agents on CF₄ plasma-exposed 2.0 p-OSG films
104	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr_1-xHf_xO₂ Thin Film without Using Noble Metal Electrode
105	Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
106	Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
107	Tailoring angular selectivity in SiO₂ slanted columnar thin films using atomic layer deposition of titanium nitride
108	Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH₃ on Particles Agitated in a Rotary Reactor
109	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
110	Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
111	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
112	TiCl₄ as a Precursor in the TiN Deposition by ALD and PEALD
113	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
114	Tribological properties of thin films made by atomic layer deposition sliding against silicon
115	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
116	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
117	Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
118	Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
119	Understanding and optimizing the floating body retention in FDSOI UTBOX