TiN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TiN films returned 127 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
2Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
3Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
4In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
5Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
6Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
7TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
8Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
9Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
10Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
11Texture of atomic layer deposited ruthenium
12Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
13Annealing behavior of ferroelectric Si-doped HfO2 thin films
14Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
15Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
16Silicon nanowire networks for multi-stage thermoelectric modules
17Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
18Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
19Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
20Nitride memristors
21Film Uniformity in Atomic Layer Deposition
22Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
23Radical Enhanced Atomic Layer Deposition of Metals and Oxides
24Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
25Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
26Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
27Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
28Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
29Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
30Tribological properties of thin films made by atomic layer deposition sliding against silicon
31Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
32Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
33Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
34Fabrication and deformation of three-dimensional hollow ceramic nanostructures
35Nonvolatile Capacitive Crossbar Array for In-Memory Computing
36Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
37Atomic layer deposition of titanium nitride for quantum circuits
38Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
39Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
40Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
41Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
42Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
43Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
44Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
45High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
46Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
47Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
48Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
49Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
50ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
51New materials for memristive switching
52A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
53Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
54NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
55Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
56Sub-10-nm ferroelectric Gd-doped HfO2 layers
57ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
58Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
59Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
60Microwave properties of superconducting atomic-layer deposited TiN films
61Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
62Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
63Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
64Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
65Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
66Plasma-enhanced atomic layer deposition for plasmonic TiN
67Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
68Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
69Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
70Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
71Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
72Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
73Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
74Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
75Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
76Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
77Mechanical characterization of hollow ceramic nanolattices
78Protective capping and surface passivation of III-V nanowires by atomic layer deposition
79Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
80In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
81Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
82Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
83Non-destructive acoustic metrology and void detection in 3x50μm TSV
84Plasma Enhanced Atomic Layer Deposition on Powders
85Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
86Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
87Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
88Fundamental beam studies of radical enhanced atomic layer deposition of TiN
89Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
90Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
91DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
92Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
93Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
94Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
95The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
96Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
97TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
98Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
99Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
100Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
101Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
102Fully CMOS-compatible titanium nitride nanoantennas
103Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
104Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
105Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
106Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
107In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
108Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
109Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
110Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
111A high-density carbon fiber neural recording array technology
112Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
113Understanding and optimizing the floating body retention in FDSOI UTBOX
114Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
115ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
116Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
117Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
118Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
119Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
120Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
121Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
122Atomic layer deposition of titanium nitride from TDMAT precursor
123Plasma-enhanced atomic layer deposition of titanium vanadium nitride
124Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
125Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
126Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
127Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films