TiN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TiN films returned 122 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
2Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
3Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
4ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
5Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
6Atomic layer deposition of titanium nitride for quantum circuits
7Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
8Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
9A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
10Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
11Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
12Atomic layer deposition of titanium nitride from TDMAT precursor
13Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
14Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
15Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
16Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
17Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
18Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
19Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
20ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
21TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
22Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
23Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
24In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
25Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
26Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
27Fabrication and deformation of three-dimensional hollow ceramic nanostructures
28Plasma-enhanced atomic layer deposition of titanium vanadium nitride
29Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
30Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
31Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
32In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
33In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
34Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
35Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
36Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
37Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
38Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
39Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
40Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
41Fully CMOS-compatible titanium nitride nanoantennas
42Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
43Plasma Enhanced Atomic Layer Deposition on Powders
44Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
45Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
46Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
47Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
48Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
49Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
50Film Uniformity in Atomic Layer Deposition
51Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
52Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
53Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
54Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
55High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
56Protective capping and surface passivation of III-V nanowires by atomic layer deposition
57Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
58Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
59Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
60Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
61Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
62Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
63Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
64Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
65Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
66Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
67Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
68Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
69Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
70Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
71Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
72Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
73Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
74Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
75Fundamental beam studies of radical enhanced atomic layer deposition of TiN
76Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
77Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
78Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
79Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
80TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
81Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
82Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
83Nitride memristors
84Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
85Plasma-enhanced atomic layer deposition for plasmonic TiN
86New materials for memristive switching
87ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
88Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
89Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
90Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
91Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
92Non-destructive acoustic metrology and void detection in 3x50μm TSV
93Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
94The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
95Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
96Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
97Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
98Silicon nanowire networks for multi-stage thermoelectric modules
99Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
100Microwave properties of superconducting atomic-layer deposited TiN films
101Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
102Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
103Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
104Understanding and optimizing the floating body retention in FDSOI UTBOX
105Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
106NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
107Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
108Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
109Radical Enhanced Atomic Layer Deposition of Metals and Oxides
110Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
111DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
112Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
113A high-density carbon fiber neural recording array technology
114Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
115Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
116Texture of atomic layer deposited ruthenium
117Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
118Mechanical characterization of hollow ceramic nanolattices
119Tribological properties of thin films made by atomic layer deposition sliding against silicon
120Annealing behavior of ferroelectric Si-doped HfO2 thin films
121Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
122Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma