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TiN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TiN films returned 127 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
2Plasma-enhanced atomic layer deposition of titanium vanadium nitride
3Microwave properties of superconducting atomic-layer deposited TiN films
4Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
5Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
6ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
7Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
8Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
9Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
10NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
11Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
12Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
13Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
14Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
15Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
16Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
17Fabrication and deformation of three-dimensional hollow ceramic nanostructures
18Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
19Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
20Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
21Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
22Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
23Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
24Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
25Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
26Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
27TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
28Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
29Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
30Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
31Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
32Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
33Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
34Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
35Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
36Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
37Tribological properties of thin films made by atomic layer deposition sliding against silicon
38Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
39Fundamental beam studies of radical enhanced atomic layer deposition of TiN
40Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
41Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
42Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
43Film Uniformity in Atomic Layer Deposition
44In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
45Understanding and optimizing the floating body retention in FDSOI UTBOX
46Fully CMOS-compatible titanium nitride nanoantennas
47Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
48Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
49Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
50Non-destructive acoustic metrology and void detection in 3x50μm TSV
51Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
52In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
53Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
54Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
55Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
56Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
57Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
58Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
59Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
60Texture of atomic layer deposited ruthenium
61Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
62Annealing behavior of ferroelectric Si-doped HfO2 thin films
63Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
64DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
65Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
66Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
67Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
68Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
69Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
70Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
71Plasma Enhanced Atomic Layer Deposition on Powders
72Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
73Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
74Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
75Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
76Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
77Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
78Sub-10-nm ferroelectric Gd-doped HfO2 layers
79Nonvolatile Capacitive Crossbar Array for In-Memory Computing
80Atomic layer deposition of titanium nitride for quantum circuits
81Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
82Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
83Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
84Nitride memristors
85Atomic layer deposition of titanium nitride from TDMAT precursor
86Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
87Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
88Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
89A high-density carbon fiber neural recording array technology
90Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
91Protective capping and surface passivation of III-V nanowires by atomic layer deposition
92Mechanical characterization of hollow ceramic nanolattices
93Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
94Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
95Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
96The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
97Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
98A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
99Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
100Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
101High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
102Plasma-enhanced atomic layer deposition for plasmonic TiN
103New materials for memristive switching
104Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
105Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
106Radical Enhanced Atomic Layer Deposition of Metals and Oxides
107Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
108Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
109Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
110Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
111In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
112Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
113Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
114Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
115Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
116Silicon nanowire networks for multi-stage thermoelectric modules
117TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
118Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
119ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
120Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
121Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
122Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
123Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
124Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
125Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
126ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
127Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma