TiN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TiN films returned 92 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
3ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
4Annealing behavior of ferroelectric Si-doped HfO2 thin films
5Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
6Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
7Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
8Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
9Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
10Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
11Atomic layer deposition of titanium nitride for quantum circuits
12Atomic layer deposition of titanium nitride from TDMAT precursor
13Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
14Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
15Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
16Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
17Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
18Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
19Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
20Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
21Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
22Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
23DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
24Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
25Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
26Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
27Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
28Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
29Fabrication and deformation of three-dimensional hollow ceramic nanostructures
30Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
31Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
32Fully CMOS-compatible titanium nitride nanoantennas
33Fundamental beam studies of radical enhanced atomic layer deposition of TiN
34High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
35Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
36Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
37Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
38In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
39Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
40Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
41Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
42Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
43Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
44Mechanical characterization of hollow ceramic nanolattices
45Microwave properties of superconducting atomic-layer deposited TiN films
46New materials for memristive switching
47NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
48Nitride memristors
49Non-destructive acoustic metrology and void detection in 3x50μm TSV
50Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
51Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
52Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
53Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
54Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
55Plasma Enhanced Atomic Layer Deposition on Powders
56Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
57Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
58Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
59Plasma-enhanced atomic layer deposition for plasmonic TiN
60Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
61Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
62Plasma-enhanced atomic layer deposition of titanium vanadium nitride
63Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
64Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
65Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
66Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
67Radical Enhanced Atomic Layer Deposition of Metals and Oxides
68Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
69Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
70Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
71Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
72Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
73Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
74Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
75Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
76Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
77Silicon nanowire networks for multi-stage thermoelectric modules
78Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
79Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
80Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
81Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
82Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
83Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
84Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
85Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
86Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
87TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
88TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
89Tribological properties of thin films made by atomic layer deposition sliding against silicon
90Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
91Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
92Understanding and optimizing the floating body retention in FDSOI UTBOX


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