
Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (6) G578-G581 (2006)
Date:
2006-04-19
Author Information
| Name | Institution |
|---|---|
| Se-Hun Kwon | Korea Advanced Institute of Science and Technology |
| Oh-Kyum Kwon | Samsung Electronics Co. |
| Jae-Sik Min | Samsung Electronics Co. |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Diffusion Barrier Properties
Analysis: Anneal
Characteristic: Adhesion
Analysis: Tape Test
Substrates
| SiO2 |
| Silicon |
Notes
| Silicon substrate HF treated. |
| 72 |
