Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals

Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (6) G578-G581 (2006)
Date:
2006-04-19

Author Information

Name Institution
Se-Hun KwonKorea Advanced Institute of Science and Technology
Oh-Kyum KwonSamsung Electronics Co.
Jae-Sik MinSamsung Electronics Co.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films


Plasma Ru



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Diffusion Barrier Properties
Analysis: Anneal

Characteristic: Adhesion
Analysis: Tape Test

Substrates

SiO2
Silicon

Keywords

Copper
Interconnect
Diffusion Barrier

Notes

Silicon substrate HF treated.
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