Sang-Won Kang Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sang-Won Kang returned 27 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
3Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
4Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
5Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
6Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
7Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
8Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
9Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
10Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
11Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
12Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
13Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
14Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
15Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
16Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
17Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
18PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
19Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
20Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
21Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
22Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
23Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
24Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
25Study on the characteristics of aluminum thin films prepared by atomic layer deposition
26Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
27TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition