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Sang-Won Kang Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sang-Won Kang returned 27 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
2Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
3Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
4Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
5Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
6PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
7Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
8Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
9Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
10Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
11Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
12Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
13Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
14A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
15Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
16Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
17Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
18Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
19Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
20Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
21Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
22Study on the characteristics of aluminum thin films prepared by atomic layer deposition
23Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
24Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
25Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
26Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
27Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN