Sang-Won Kang Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sang-Won Kang returned 27 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
2Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
3A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
4Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
5Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
6Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
7Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
8Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
9Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
10PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
11Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
12Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
13Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
14Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
15Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
16Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
17Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
18Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
19Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
20Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
21Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
22Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
23Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
24Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
25TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
26Study on the characteristics of aluminum thin films prepared by atomic layer deposition
27Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process