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Publication Information

Title: Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition

Type: Journal

Info: APPLIED PHYSICS LETTERS 90, 232906 (2007)

Date: 2007-06-05

DOI: http://dx.doi.org/10.1063/1.2746416

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma HfO2 using Unknown

Deposition Temperature = 250C

352535-01-4

7782-44-7

Plasma Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

Si(100)

Keywords

Nanolaminate

Dielectric Thin Films

Dielectric Constant

Ozone

Thin Film

Aluminum Compounds

Notes

700C high T RTA

Forming gas anneal

HF dip and DI rinse.

39



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