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Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 90, 232906 (2007)
Date:
2007-06-05
Author Information
| Name | Institution |
|---|---|
| Pan Kwi Park | Korea Advanced Institute of Science and Technology |
| Eun-Soo Cha | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 700C high T RTA |
| Forming gas anneal |
| HF dip and DI rinse. |
| 39 |