Publication Information

Title:
Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 90, 232906 (2007)
Date:
2007-06-05

Author Information

Name Institution
Pan Kwi ParkKorea Advanced Institute of Science and Technology
Eun-Soo ChaKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Nanolaminate
Dielectric Thin Films
Dielectric Constant
Ozone
Thin Film
Aluminum Compounds

Notes

700C high T RTA
Forming gas anneal
HF dip and DI rinse.
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