Title: Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
Type: Journal
Info: APPLIED PHYSICS LETTERS 90, 232906 (2007)
Date: 2007-06-05
DOI: http://dx.doi.org/10.1063/1.2746416
Name
Institution
Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology
352535-01-4
Characteristic
Analysis
Diagnostic
Thickness
TEM, Transmission Electron Microscope
Unknown
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
Unknown
Chemical Binding
XPS, X-ray Photoelectron Spectroscopy
Unknown
Dielectric Constant, Permittivity
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Si(100)
Nanolaminate
Dielectric Thin Films
Dielectric Constant
Ozone
Thin Film
Aluminum Compounds
700C high T RTA
Forming gas anneal
HF dip and DI rinse.
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