TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide, CAS# 352535-01-4

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr), contained in 50 ml cylinder for CVD/ALD
2GelestHafnium Tetrakis(Ethylmethylamide)
3EreztechTEMAH, Tetrakis[(EthylMethyl)Amido]Hafnium, [(EtMe)N]4Hf
4Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 71 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
2Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
4Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
5Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
6Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
7Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
8A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
9Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
10An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
11Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
12Breakdown and Protection of ALD Moisture Barrier Thin Films
13Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
14Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
15Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
16Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
17Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
18Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
19Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
20Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
21Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
22Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
23Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
24Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
25Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
26In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
27Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
28Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
29Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
30Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
31Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
32Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
33Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
34Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
35Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
36Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
37Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
38Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
39Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
40Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
41On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
42Optical properties and bandgap evolution of ALD HfSiOx films
43Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
44Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
45Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
46Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
47Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
48Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
49Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
50Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
51Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
52Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
53Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
54Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
55Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
56Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
57Symmetrical Al2O3-based passivation layers for p- and n-type silicon
58Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
59The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
60The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
61The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
62The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
63Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
64Trapped charge densities in Al2O3-based silicon surface passivation layers
65Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
66Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
67Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
68Optical properties and bandgap evolution of ALD HfSiOx films
69Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
70Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
71Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode


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