Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf, CAS# 352535-01-4

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr)
2Gelest🇺🇸Hafnium Tetrakis(Ethylmethylamide)
3Pegasus Chemicals🇬🇧Tetrakis(ethylmethylamido)hafnium(IV)
4DOCK/CHEMICALS🇩🇪Tetrakis(ethylmethylamido)hafnium
5Ereztech🇺🇸Tetrakis(ethylmethylamino) hafnium
6Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr), contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 88 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
2Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
3The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
4Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
5Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
6Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
7Symmetrical Al2O3-based passivation layers for p- and n-type silicon
8Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
9Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
10Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
11Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
12Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
13Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
14Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
15Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
16Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
17Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
18Optical properties and bandgap evolution of ALD HfSiOx films
19The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
20Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
21Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
22Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
23HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
24Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
25Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
26Optical properties and bandgap evolution of ALD HfSiOx films
27Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
28Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
29Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
30Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
31Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
32Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
33Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
34Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
35Sub-10-nm ferroelectric Gd-doped HfO2 layers
36Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
37Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
38Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
39An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
40Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
41Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
42Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
43Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
44Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
45Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
46Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
47Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
48Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
49Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
50Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
51Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
52Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
53Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
54Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
55Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
56Trapped charge densities in Al2O3-based silicon surface passivation layers
57Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
58A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
59Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
60In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
61Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
62The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
63Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
64Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
65Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
66The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
67Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
68Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
69Ferroelectricity in hafnia controlled via surface electrochemical state
70Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
71Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
72Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
73Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
74Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
75Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
76Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
77Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
78Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
79Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
80Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
81Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
82Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
83Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
84Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
85On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
86Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
87Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
88Breakdown and Protection of ALD Moisture Barrier Thin Films