TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf, CAS# 352535-01-4
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 80 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|
| 1 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
| 2 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
| 3 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 4 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 5 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 6 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 7 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 8 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 9 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 10 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 11 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 12 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 13 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
| 14 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 15 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 16 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 17 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
| 18 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 19 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 20 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 21 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 22 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 23 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 24 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 25 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 26 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 27 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 28 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 29 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 30 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
| 31 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 32 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 33 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 34 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 35 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 36 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 37 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 38 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 39 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 40 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
| 41 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 42 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 43 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 44 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 45 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 46 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 47 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 48 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 49 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 50 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 51 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 52 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 53 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 54 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 55 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 56 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 57 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
| 58 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 59 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 60 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 61 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 62 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 63 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 64 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 65 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 66 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 67 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 68 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 69 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
| 70 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 71 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 72 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 73 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 74 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 75 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 76 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 77 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 78 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 79 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 80 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
