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TEMAH, Tetrakis[(EthylMethyl)Amido]Hafnium, [(EtMe)N]4Hf, CAS# 352535-01-4

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr)
2Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr), contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 60 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
2Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
4Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
5Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
6Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
7Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
8A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
9An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
10Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
11Breakdown and Protection of ALD Moisture Barrier Thin Films
12Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
13Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
14Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
15Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
16Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
17Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
18Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
19Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
20Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
21Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
22Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
23Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
24Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
25Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
26Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
27Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
28Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
29Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
30Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
31Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
32Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
33Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
34Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
35On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
36Optical properties and bandgap evolution of ALD HfSiOx films
37Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
38Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
39Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
40Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
41Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
42Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
43Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
44Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
45Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
46Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
47Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
48Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
49Symmetrical Al2O3-based passivation layers for p- and n-type silicon
50Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
51The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
52The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
53The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
54The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
55Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
56Trapped charge densities in Al2O3-based silicon surface passivation layers
57Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
58Optical properties and bandgap evolution of ALD HfSiOx films
59Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
60Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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