About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor

Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 79-86 (2007)
Date:
2007-03-01
DOI:
http://dx.doi.org/10.1149/1.2721476

Author Information

Name Institution
Chris HodsonOxford Instruments
Nick SinghOxford Instruments
S. B. S. HeilEindhoven University of Technology
J. L. van HemmenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-320C

Thermal HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 200-320C

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 320C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: Nanometrics Nanoscope 3000

Characteristic: Uniformity
Analysis: Reflectometry
Diagnostic: Nanometrics Nanoscope 3000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

1328