1 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
2 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
3 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
4 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
5 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
6 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
7 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
8 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
9 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
10 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
11 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
12 | Plasma-enhanced atomic layer deposition of BaTiO3 |
13 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
14 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
15 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
16 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
17 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
18 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
19 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
20 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
21 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
22 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
23 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
24 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
25 | Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition |
26 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
27 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
28 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
29 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
30 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
31 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
32 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
33 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
34 | Opportunities of Atomic Layer Deposition for Perovskite Solar Cells |
35 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
36 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
37 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
38 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
39 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
40 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
41 | Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides |
42 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
43 | Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma |
44 | Comparative study of ALD SiO2 thin films for optical applications |
45 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
46 | A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes |
47 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
48 | Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions |
49 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
50 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
51 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
52 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
53 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
54 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
55 | Order of Dry and Wet Mixed-Length Self-Assembled Monolayers |
56 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
57 | Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology |
58 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
59 | Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices |
60 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
61 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
62 | Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma |
63 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
64 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
65 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
66 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
67 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
68 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
69 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
70 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
71 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
72 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
73 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
74 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
75 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
76 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
77 | Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD |
78 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
79 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
80 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
81 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
82 | Propagation Effects in Carbon Nanoelectronics |
83 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
84 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
85 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
86 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
87 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
88 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
89 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
90 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
91 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
92 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
93 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
94 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
95 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
96 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
97 | Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates |
98 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
99 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
100 | Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys |
101 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
102 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
103 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
104 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
105 | High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors |
106 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
107 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
108 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
109 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
110 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
111 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
112 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
113 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
114 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
115 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
116 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
117 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
118 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
119 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
120 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
121 | On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance |
122 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
123 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
124 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
125 | Topographically selective deposition |
126 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
127 | Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors |
128 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
129 | The important role of water in growth of monolayer transition metal dichalcogenides |
130 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
131 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
132 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
133 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
134 | Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers |
135 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
136 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
137 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
138 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
139 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
140 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
141 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
142 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
143 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
144 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
145 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
146 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
147 | Microwave properties of superconducting atomic-layer deposited TiN films |
148 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
149 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
150 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
151 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
152 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
153 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
154 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
155 | Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces |
156 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
157 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
158 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
159 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
160 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
161 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
162 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
163 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
164 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |