Topographically selective deposition

Type:
Journal
Info:
Applied Physics Letters 114, 043101 (2019)
Date:
2019-01-12
DOI:
http://dx.doi.org/10.1063/1.5065801

Author Information

Name Institution
A. ChakerGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)
V. PesceGrenoble Alps University (UGA)
S. BelahcenGrenoble Alps University (UGA)
Rémi VallatGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
N. PossemeCEA - LETI MINATEC
M. BonvalotGrenoble Alps University (UGA)
Ahmad BsiesyGrenoble Alps University (UGA)

Films

Plasma Ta2O5

Hardware used: Oxford Instruments FlexAL
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Sputter Rate
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Selectivity
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Silicon

Keywords

Substrate Biasing
High Aspect Ratio
Area Selective

Notes

1485