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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Topographically selective deposition
Type:
Journal
Info:
Applied Physics Letters 114, 043101 (2019)
Date:
2019-01-12
Author Information
| Name | Institution |
|---|---|
| Ahmad Chaker | Grenoble Alps University (UGA) |
| Christophe Vallée | Grenoble Alps University (UGA) |
| V. Pesce | Grenoble Alps University (UGA) |
| Samia Belahcen | Grenoble Alps University (UGA) |
| Rémi Vallat | Grenoble Alps University (UGA) |
| Rémy Gassilloud | CEA - LETI MINATEC |
| N. Posseme | CEA - LETI MINATEC |
| Marceline Bonvalot | Grenoble Alps University (UGA) |
| Ahmad Bsiesy | Grenoble Alps University (UGA) |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Sputter Rate
Analysis: Ellipsometry
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Selectivity
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Silicon |
Keywords
| Substrate Biasing |
| High Aspect Ratio |
| Area Selective |
Notes
| 1485 |