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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
Type:
Journal
Info:
Applied Physics Letters 109, 013102 (2016)
Date:
2016-06-23
Author Information
| Name | Institution |
|---|---|
| N. Muthusubramanian | Delft University of Technology |
| E. Galan | Delft University of Technology |
| C. Maity | Delft University of Technology |
| R. Eelkema | Delft University of Technology |
| F. C. Grozema | Delft University of Technology |
| H. S. J. van der Zant | Delft University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Au |
Keywords
Notes
| 869 |