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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
Type:
Journal
Info:
Applied Physics Letters 109, 013102 (2016)
Date:
2016-06-23
Author Information
| Name | Institution |
|---|---|
| N. Muthusubramanian | Delft University of Technology |
| E. Galan | Delft University of Technology |
| C. Maity | Delft University of Technology |
| R. Eelkema | Delft University of Technology |
| F. C. Grozema | Delft University of Technology |
| H. S. J. van der Zant | Delft University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Au |
Keywords
Notes
| 869 |