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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
Type:
Journal
Info:
Applied Physics Letters 109, 013102 (2016)
Date:
2016-06-23
Author Information
| Name | Institution |
|---|---|
| N. Muthusubramanian | Delft University of Technology |
| E. Galan | Delft University of Technology |
| C. Maity | Delft University of Technology |
| R. Eelkema | Delft University of Technology |
| F. C. Grozema | Delft University of Technology |
| H. S. J. van der Zant | Delft University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Au |
Keywords
Notes
| 869 |