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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
Type:
Journal
Info:
Applied Physics Letters 109, 013102 (2016)
Date:
2016-06-23
Author Information
| Name | Institution |
|---|---|
| N. Muthusubramanian | Delft University of Technology |
| E. Galan | Delft University of Technology |
| C. Maity | Delft University of Technology |
| R. Eelkema | Delft University of Technology |
| F. C. Grozema | Delft University of Technology |
| H. S. J. van der Zant | Delft University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Au |
Keywords
Notes
| 869 |