Inductively Coupled Plasma Sources for ALD and Surface Engineering

Plasma ALD, LLC designs and supplies compact 13.56 MHz inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition, thin-film etching, surface cleaning, surface modification, and laboratory plasma research.

Our ICP sources are designed for researchers and equipment manufacturers who need to integrate a high-density, low-pressure plasma source with an existing vacuum chamber, ALD reactor, or custom processing system.

Plasma ALD provides both the plasma-source hardware and the technical expertise needed to integrate it successfully. Support is available for source configuration, vacuum-system integration, RF matching, plasma operation, process development, and troubleshooting.

The source is particularly well suited to PEALD applications requiring remotely generated radicals and ions while maintaining flexibility in plasma power, gas chemistry, pressure, and source-to-substrate configuration.



ICP 300

$9999 base price for US customers - academic discounts available

ICP 300 features:

  • High plasma densities: 1010 - 1012 cm-3 depending on gas chemistry and pressure
  • High radical densities
  • Compatible with multiple plasma chemistries: Ar, He, Ne, Kr, O2, N2, H2O, CO2, CO, N2O, NH3, H2S, ...
  • Industry standard 13.56MHz RF power
  • Non-integrated matching network enables more flexible plasma source placement
  • Main vacuum interface can be ISO100 or 2.75" ConFlat
  • KF16 bulkhead inlet can be easily adapted to any standard plasma gas inlet fitting: VCR, compression, NPT, etc.

ICP 300 RF requirements:

  • 300W, 13.56MHz RF power supply
  • Automatic impedance matching network capable of 300W, 13.56MHz operation with HN output
  • Appropriate cable connection between power supply and matching network
  • RG393 cable with HN connectors, 1m or less in length, for connection between matching network output and ICP 300 input
  • Appropriate RF equipment widely available from other vendors or use your own existing hardware

ICP 300 additional requirements:

  • ISO100 or 2.75"CF vacuum system interface
  • Vacuum levels 5 - 100 mTorr during plasma operation
  • Over pressure protections
  • Controlled plasma gas flows
  • Circulating cooling water supply for plasma coil
  • 110V connection for plasma tube cooling fans
  • Indoor, controlled environment operation, 10-90% humidity, 5-40°C, pollution degree 2

Draw on our decades of plasma processing experience for assistance with integration and process optimization to get the results you need.


Not seeing what you need? Our plasma source experience and design capabilities extend beyond this product line.


Contact us for more details.



The plasma enhanced atomic layer deposition publication database is located here.