| 1 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 2 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 3 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 4 | A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost |
| 5 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
| 6 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
| 7 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
| 8 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 9 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 10 | Optical and Electrical Properties of TixSi1-xOy Films |
| 11 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 12 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 13 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 14 | Hafnia and alumina on sulphur passivated germanium |
| 15 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
| 16 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
| 17 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 18 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 19 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 20 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
| 21 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 22 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
| 23 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
| 24 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
| 25 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
| 26 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
| 27 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 28 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 29 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 30 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 31 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 32 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 33 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
| 34 | Charge effects of ultrafine FET with nanodot type floating gate |
| 35 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 36 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
| 37 | Modal properties of a strip-loaded horizontal slot waveguide |
| 38 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 39 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 40 | Topographically selective deposition |
| 41 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 42 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
| 43 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
| 44 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 45 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
| 46 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 47 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 48 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
| 49 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
| 50 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 51 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 52 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
| 53 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 54 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
| 55 | Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys |
| 56 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 57 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
| 58 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
| 59 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 60 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 61 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 62 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 63 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
| 64 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 65 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
| 66 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
| 67 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 68 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 69 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 70 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
| 71 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
| 72 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 73 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 74 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 75 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 76 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
| 77 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 78 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 79 | Biofilm prevention on cochlear implants |
| 80 | Capacitance spectroscopy of gate-defined electronic lattices |
| 81 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
| 82 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 83 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
| 84 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
| 85 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
| 86 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 87 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 88 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 89 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
| 90 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 91 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 92 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
| 93 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 94 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
| 95 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 96 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
| 97 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 98 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 99 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
| 100 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 101 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 102 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 103 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
| 104 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
| 105 | Oxygen migration in TiO2-based higher-k gate stacks |
| 106 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
| 107 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 108 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 109 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 110 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 111 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 112 | Flexible, light trapping substrates for organic photovoltaics |
| 113 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 114 | Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate |
| 115 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 116 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 117 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
| 118 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 119 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 120 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 121 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 122 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
| 123 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 124 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
| 125 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 126 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 127 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 128 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
| 129 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 130 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 131 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 132 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 133 | Atomic Layer Deposition of Gold Metal |
| 134 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 135 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
| 136 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 137 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
| 138 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 139 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 140 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 141 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
| 142 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 143 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 144 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 145 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 146 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 147 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| 148 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| 149 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
| 150 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 151 | Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition |
| 152 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 153 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 154 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
| 155 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 156 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
| 157 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 158 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 159 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 160 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 161 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 162 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 163 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 164 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 165 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 166 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 167 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
| 168 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 169 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
| 170 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 171 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 172 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
| 173 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 174 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 175 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 176 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
| 177 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 178 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
| 179 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 180 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 181 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 182 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 183 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 184 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 185 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 186 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 187 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 188 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 189 | Flexible Memristive Memory Array on Plastic Substrates |
| 190 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
| 191 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 192 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 193 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 194 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
| 195 | Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition |
| 196 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 197 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 198 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
| 199 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 200 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 201 | Opportunities of Atomic Layer Deposition for Perovskite Solar Cells |
| 202 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
| 203 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 204 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
| 205 | The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process |
| 206 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 207 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 208 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
| 209 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 210 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
| 211 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
| 212 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 213 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 214 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 215 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 216 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 217 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 218 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 219 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
| 220 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 221 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 222 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
| 223 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 224 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 225 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
| 226 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 227 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 228 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 229 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 230 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
| 231 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 232 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 233 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
| 234 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 235 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
| 236 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 237 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 238 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 239 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 240 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 241 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 242 | Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells |
| 243 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 244 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 245 | Room-Temperature Atomic Layer Deposition of Platinum |
| 246 | Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition |
| 247 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 248 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 249 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 250 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
| 251 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 252 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 253 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 254 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
| 255 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 256 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 257 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 258 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| 259 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 260 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 261 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 262 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 263 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
| 264 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 265 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 266 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
| 267 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 268 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
| 269 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 270 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
| 271 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
| 272 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 273 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 274 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 275 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 276 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 277 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 278 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 279 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 280 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 281 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
| 282 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 283 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
| 284 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 285 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
| 286 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 287 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
| 288 | Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits |
| 289 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
| 290 | Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices |
| 291 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 292 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 293 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
| 294 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 295 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 296 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 297 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 298 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
| 299 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 300 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 301 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 302 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 303 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
| 304 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 305 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 306 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
| 307 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 308 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 309 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 310 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 311 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 312 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 313 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
| 314 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 315 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
| 316 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
| 317 | Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium |
| 318 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 319 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
| 320 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 321 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 322 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 323 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
| 324 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 325 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 326 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
| 327 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 328 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 329 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 330 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 331 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
| 332 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 333 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
| 334 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 335 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 336 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 337 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 338 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
| 339 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
| 340 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 341 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 342 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
| 343 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 344 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 345 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 346 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
| 347 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 348 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 349 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
| 350 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 351 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
| 352 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 353 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 354 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 355 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 356 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 357 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 358 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
| 359 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 360 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
| 361 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 362 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 363 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 364 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 365 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
| 366 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
| 367 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 368 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 369 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
| 370 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
| 371 | Residual stress study of thin films deposited by atomic layer deposition |
| 372 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 373 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
| 374 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 375 | Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties |
| 376 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 377 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
| 378 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 379 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 380 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
| 381 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
| 382 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 383 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 384 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 385 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
| 386 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 387 | Dynamic tuning of plasmon resonance in the visible using graphene |
| 388 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
| 389 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 390 | The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering |
| 391 | Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells |
| 392 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
| 393 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
| 394 | Gate Insulator for High Mobility Oxide TFT |
| 395 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 396 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 397 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 398 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 399 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 400 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
| 401 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 402 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 403 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 404 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 405 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 406 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 407 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 408 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
| 409 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 410 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 411 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 412 | Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization |
| 413 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 414 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 415 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
| 416 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 417 | Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition |
| 418 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 419 | Bipolar resistive switching in amorphous titanium oxide thin film |
| 420 | Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C |
| 421 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
| 422 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
| 423 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 424 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 425 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
| 426 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 427 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 428 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 429 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 430 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
| 431 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
| 432 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 433 | Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy |
| 434 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
| 435 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
| 436 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
| 437 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
| 438 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 439 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 440 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 441 | Anti-stiction coating for mechanically tunable photonic crystal devices |
| 442 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
| 443 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 444 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
| 445 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 446 | Growth of silica nanowires in vacuum |
| 447 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
| 448 | Study on the resistive switching time of TiO2 thin films |
| 449 | Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions |
| 450 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 451 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 452 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 453 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 454 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 455 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
| 456 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 457 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 458 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 459 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 460 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 461 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 462 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 463 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 464 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 465 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 466 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
| 467 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
| 468 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 469 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 470 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
| 471 | The important role of water in growth of monolayer transition metal dichalcogenides |
| 472 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
| 473 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
| 474 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 475 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 476 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 477 | Systematic efficiency study of line-doubled zone plates |
| 478 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 479 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 480 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
| 481 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 482 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 483 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 484 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
| 485 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
| 486 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 487 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 488 | Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application |
| 489 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 490 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 491 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
| 492 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 493 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 494 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
| 495 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
| 496 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
| 497 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 498 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
| 499 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
| 500 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 501 | Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces |
| 502 | High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds |
| 503 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
| 504 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 505 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 506 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 507 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 508 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 509 | Fixed-Gap Tunnel Junction for Reading DNA Nucleotides |
| 510 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 511 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
| 512 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 513 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 514 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 515 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 516 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 517 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 518 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
| 519 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 520 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
| 521 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 522 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
| 523 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 524 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 525 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 526 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 527 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 528 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 529 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 530 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 531 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 532 | Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films |
| 533 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
| 534 | Atomic layer deposition of YMnO3 thin films |
| 535 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 536 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 537 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 538 | Advances in the fabrication of graphene transistors on flexible substrates |
| 539 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 540 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
| 541 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
| 542 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 543 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 544 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
| 545 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
| 546 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 547 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 548 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
| 549 | Designing high performance precursors for atomic layer deposition of silicon oxide |
| 550 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
| 551 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
| 552 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 553 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 554 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
| 555 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 556 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 557 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 558 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 559 | Comparative study of ALD SiO2 thin films for optical applications |
| 560 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 561 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
| 562 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 563 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
| 564 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 565 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 566 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
| 567 | Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices |
| 568 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 569 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 570 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 571 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 572 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 573 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
| 574 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 575 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 576 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 577 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 578 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
| 579 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
| 580 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 581 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 582 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 583 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 584 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 585 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 586 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 587 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 588 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 589 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 590 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
| 591 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 592 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 593 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 594 | High-Reflective Coatings For Ground and Space Based Applications |
| 595 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 596 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
| 597 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 598 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 599 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
| 600 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 601 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
| 602 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 603 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 604 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 605 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
| 606 | Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition |
| 607 | Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition |
| 608 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 609 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 610 | Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82% |
| 611 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 612 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
| 613 | Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD |
| 614 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 615 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 616 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 617 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 618 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 619 | Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites |
| 620 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 621 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 622 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 623 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
| 624 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
| 625 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 626 | Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates |
| 627 | Encapsulation method for atom probe tomography analysis of nanoparticles |
| 628 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 629 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 630 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 631 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 632 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 633 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 634 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
| 635 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 636 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 637 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 638 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 639 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 640 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 641 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 642 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
| 643 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 644 | Innovative remote plasma source for atomic layer deposition for GaN devices |
| 645 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
| 646 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
| 647 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 648 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
| 649 | Surface and sensing properties of PE-ALD SnO2 thin film |
| 650 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
| 651 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 652 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
| 653 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 654 | Co/CoP Nanoparticles Encapsulated Within N, P-Doped Carbon Nanotubes on Nanoporous Metal-Organic Framework Nanosheets for Oxygen Reduction and Oxygen Evolution Reactions |
| 655 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 656 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 657 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 658 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 659 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
| 660 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
| 661 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 662 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
| 663 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 664 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 665 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 666 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 667 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 668 | Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24% |
| 669 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 670 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 671 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 672 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
| 673 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 674 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 675 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 676 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
| 677 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 678 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
| 679 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 680 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 681 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 682 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 683 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 684 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 685 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 686 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 687 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 688 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
| 689 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
| 690 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 691 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
| 692 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
| 693 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
| 694 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 695 | Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells |
| 696 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 697 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 698 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
| 699 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
| 700 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 701 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
| 702 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 703 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 704 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
| 705 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 706 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 707 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 708 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 709 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 710 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
| 711 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 712 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 713 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 714 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 715 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 716 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
| 717 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 718 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 719 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 720 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
| 721 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
| 722 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 723 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
| 724 | Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy |
| 725 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 726 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
| 727 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 728 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 729 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
| 730 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 731 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
| 732 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
| 733 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 734 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 735 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 736 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 737 | The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism |
| 738 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 739 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 740 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 741 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 742 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
| 743 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
| 744 | Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors |
| 745 | Residual stress study of thin films deposited by atomic layer deposition |
| 746 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
| 747 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
| 748 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 749 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 750 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 751 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
| 752 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 753 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 754 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
| 755 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 756 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 757 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 758 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
| 759 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 760 | Epitaxial 1D electron transport layers for high-performance perovskite solar cells |
| 761 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
| 762 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 763 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 764 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 765 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
| 766 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 767 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 768 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 769 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 770 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 771 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 772 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 773 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 774 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 775 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 776 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 777 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 778 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 779 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 780 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
| 781 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
| 782 | Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides |
| 783 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 784 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 785 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
| 786 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 787 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 788 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 789 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 790 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 791 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
| 792 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 793 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 794 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 795 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 796 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 797 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 798 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
| 799 | Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition |
| 800 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 801 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 802 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
| 803 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
| 804 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
| 805 | Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors |
| 806 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 807 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
| 808 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 809 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 810 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
| 811 | Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices |
| 812 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 813 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 814 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 815 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 816 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 817 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
| 818 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 819 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 820 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
| 821 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
| 822 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 823 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
| 824 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 825 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 826 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 827 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 828 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 829 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
| 830 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 831 | Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses |
| 832 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 833 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
| 834 | ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies |
| 835 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 836 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 837 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
| 838 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
| 839 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 840 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
| 841 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 842 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| 843 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
| 844 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 845 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 846 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 847 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 848 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 849 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 850 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 851 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 852 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 853 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 854 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 855 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 856 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 857 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
| 858 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 859 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 860 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 861 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 862 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 863 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 864 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 865 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 866 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 867 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 868 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 869 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 870 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 871 | Optical and Electrical Properties of AlxTi1-xO Films |
| 872 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 873 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 874 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 875 | Single-Cell Photonic Nanocavity Probes |
| 876 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 877 | Experimental verification of electro-refractive phase modulation in graphene |
| 878 | Ferroelectricity in hafnia controlled via surface electrochemical state |
| 879 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 880 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 881 | Plasma-enhanced atomic layer deposition of zinc phosphate |
| 882 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 883 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 884 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 885 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 886 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 887 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
| 888 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 889 | Highly efficient and bending durable perovskite solar cells: toward a wearable power source |
| 890 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 891 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
| 892 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
| 893 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 894 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 895 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
| 896 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 897 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 898 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 899 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 900 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 901 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 902 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 903 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
| 904 | Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD |
| 905 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 906 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 907 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 908 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 909 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 910 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
| 911 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 912 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 913 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 914 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
| 915 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 916 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 917 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
| 918 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 919 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 920 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
| 921 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 922 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 923 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 924 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
| 925 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 926 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
| 927 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
| 928 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 929 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
| 930 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 931 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 932 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 933 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
| 934 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 935 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 936 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
| 937 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 938 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 939 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 940 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
| 941 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 942 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 943 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 944 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 945 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 946 | The important role of water in growth of monolayer transition metal dichalcogenides |
| 947 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
| 948 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
| 949 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 950 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
| 951 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 952 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
| 953 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
| 954 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 955 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 956 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 957 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 958 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 959 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 960 | Improved understanding of recombination at the Si/Al2O3 interface |
| 961 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
| 962 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 963 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 964 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
| 965 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 966 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
| 967 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
| 968 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 969 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 970 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
| 971 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 972 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 973 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 974 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 975 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
| 976 | Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 977 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 978 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 979 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 980 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 981 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
| 982 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 983 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 984 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 985 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
| 986 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 987 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 988 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 989 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 990 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
| 991 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 992 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 993 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
| 994 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 995 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
| 996 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
| 997 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 998 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 999 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 1000 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
| 1001 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
| 1002 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 1003 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 1004 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 1005 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
| 1006 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
| 1007 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 1008 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 1009 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 1010 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 1011 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 1012 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
| 1013 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 1014 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 1015 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
| 1016 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 1017 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 1018 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 1019 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 1020 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 1021 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 1022 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 1023 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 1024 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 1025 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 1026 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
| 1027 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
| 1028 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 1029 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 1030 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 1031 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
| 1032 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 1033 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 1034 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 1035 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 1036 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
| 1037 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 1038 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 1039 | Hafnia and alumina on sulphur passivated germanium |
| 1040 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 1041 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 1042 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 1043 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 1044 | Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD |
| 1045 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 1046 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 1047 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 1048 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 1049 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 1050 | Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode |
| 1051 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 1052 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 1053 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 1054 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 1055 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 1056 | A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes |
| 1057 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 1058 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 1059 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 1060 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 1061 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 1062 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
| 1063 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 1064 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 1065 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
| 1066 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 1067 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 1068 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
| 1069 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 1070 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 1071 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
| 1072 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 1073 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 1074 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 1075 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 1076 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 1077 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 1078 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 1079 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 1080 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 1081 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
| 1082 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 1083 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 1084 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 1085 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
| 1086 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
| 1087 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 1088 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 1089 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 1090 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 1091 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
| 1092 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 1093 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 1094 | Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells |
| 1095 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 1096 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 1097 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
| 1098 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 1099 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 1100 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 1101 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
| 1102 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 1103 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
| 1104 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 1105 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 1106 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| 1107 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
| 1108 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 1109 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 1110 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 1111 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 1112 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 1113 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 1114 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 1115 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 1116 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 1117 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
| 1118 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 1119 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 1120 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 1121 | Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings |
| 1122 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 1123 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
| 1124 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 1125 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 1126 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
| 1127 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 1128 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
| 1129 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
| 1130 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
| 1131 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 1132 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
| 1133 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 1134 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 1135 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 1136 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 1137 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 1138 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 1139 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 1140 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 1141 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 1142 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 1143 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
| 1144 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 1145 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
| 1146 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 1147 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 1148 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 1149 | High-efficiency embedded transmission grating |
| 1150 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
| 1151 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 1152 | High-Reflective Coatings For Ground and Space Based Applications |
| 1153 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 1154 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 1155 | Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films |
| 1156 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 1157 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 1158 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 1159 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 1160 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 1161 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 1162 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 1163 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
| 1164 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 1165 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
| 1166 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 1167 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
| 1168 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 1169 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
| 1170 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 1171 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| 1172 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 1173 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
| 1174 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 1175 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
| 1176 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
| 1177 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
| 1178 | Propagation Effects in Carbon Nanoelectronics |
| 1179 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 1180 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
| 1181 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 1182 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
| 1183 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 1184 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 1185 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 1186 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
| 1187 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 1188 | Tuning size and coverage of Pd nanoparticles using atomic layer deposition |
| 1189 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 1190 | Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge |
| 1191 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
| 1192 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 1193 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 1194 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
| 1195 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 1196 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 1197 | High-efficiency embedded transmission grating |
| 1198 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 1199 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 1200 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 1201 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
| 1202 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 1203 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
| 1204 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
| 1205 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 1206 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 1207 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 1208 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 1209 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 1210 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 1211 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
| 1212 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 1213 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
| 1214 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
| 1215 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
| 1216 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 1217 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
| 1218 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 1219 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 1220 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 1221 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 1222 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 1223 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
| 1224 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
| 1225 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 1226 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 1227 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 1228 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 1229 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 1230 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 1231 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
| 1232 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 1233 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 1234 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 1235 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 1236 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 1237 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 1238 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
| 1239 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 1240 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
| 1241 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 1242 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 1243 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 1244 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 1245 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 1246 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 1247 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory |
| 1248 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 1249 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 1250 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 1251 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 1252 | A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density |
| 1253 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 1254 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
| 1255 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 1256 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 1257 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
| 1258 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 1259 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 1260 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 1261 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 1262 | Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution |
| 1263 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 1264 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 1265 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
| 1266 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
| 1267 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
| 1268 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
| 1269 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 1270 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 1271 | Very high frequency plasma reactant for atomic layer deposition |
| 1272 | Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8 |
| 1273 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 1274 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 1275 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 1276 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 1277 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
