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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

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Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices

Type:
Journal
Info:
IEEE Transactions on Biomedical Engineering, Volume:60, Issue:10, 2013
Date:
2013-06-06
DOI:
http://dx.doi.org/10.1109/TBME.2013.2266542

Author Information

Name Institution
Xianzong XieUniversity of Utah
Loren RiethUniversity of Utah
Ryan CaldwellUniversity of Utah
M. DiwekarUniversity of Utah
Prashant TathireddyUniversity of Utah
Rohit SharmaUniversity of Utah
Florian SolzbacherUniversity of Utah

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

SiO2
Au

Notes

571