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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s).

NumberTitle
1Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
2New materials for memristive switching
3Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
4A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
5Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
6Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
7Low-Power Double-Gate ZnO TFT Active Rectifier
8Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
9Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
10Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
11Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
12Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
13Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
14The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
15Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
16Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
17High-Reflective Coatings For Ground and Space Based Applications
18Symmetrical Al2O3-based passivation layers for p- and n-type silicon
19Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
20Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
21PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
22Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
23Improved understanding of recombination at the Si/Al2O3 interface
24Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
25Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
26Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
27AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
28Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
29Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
30Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
31Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
32Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
33Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
34Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
35Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
36Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
37Fast Flexible Plastic Substrate ZnO Circuits
38A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
39Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
40Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
41Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
42Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
43Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
44A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
45Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
46Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
47Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
48High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
49Gate Insulator for High Mobility Oxide TFT
50Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
51Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
52Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
53Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
54Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
55Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
56GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
57Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
58Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
59Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
60Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
61Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
62Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
63Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
64Tuning size and coverage of Pd nanoparticles using atomic layer deposition
65Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
66Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
67Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
68Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
69Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
70Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
71Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
72Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
73TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
74Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
75Impact of interface materials on side permeation in indirect encapsulation of organic electronics
76Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
77Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
78Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
79Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
80Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
81Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
82Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
83Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
84Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
85Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
86Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
87High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
88Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
891D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
90Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
91A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
92Fast PEALD ZnO Thin-Film Transistor Circuits
93Composite materials and nanoporous thin layers made by atomic layer deposition
94Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
95Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
96Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
97Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
98Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
99Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
100Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
101XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
102Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
103Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
104Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
105Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
106Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
107Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
108Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
109Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
110In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
111Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
112Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
113Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
114Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
115Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
116Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
117Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
118Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
119Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
120A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
121Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
122Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
123Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
124Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
125Flexible, light trapping substrates for organic photovoltaics
126Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
127In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
128Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
129Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
130High-efficiency embedded transmission grating
131Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
132Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
133Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
134Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
135Tribological properties of thin films made by atomic layer deposition sliding against silicon
136Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
137Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
138Nonvolatile Capacitive Crossbar Array for In-Memory Computing
139Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
140Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
141Radical Enhanced Atomic Layer Deposition of Metals and Oxides
142Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
143Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
144Anti-stiction coating for mechanically tunable photonic crystal devices
145First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
146Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
147Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
148Silicon surface passivation with atomic layer deposited aluminum nitride
149Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
150Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
151Passivation effects of atomic-layer-deposited aluminum oxide
152Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
153Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
154Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
155Propagation Effects in Carbon Nanoelectronics
156Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
157Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
158Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
159Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
160Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
161Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
162Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
163Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
164Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
165Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
166Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
167Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
168A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
169Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
170Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
171Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
172Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
173A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
174Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
175Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
176Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
177Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
178Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
179The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
180Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
181Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
182Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
183Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
184Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
185Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
186Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
187Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
188Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
189Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
190Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
191Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
192AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
193Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
194Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
195Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
196Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
197Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
198Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
199Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
200Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
201Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
202Innovative remote plasma source for atomic layer deposition for GaN devices
203Patterned deposition by plasma enhanced spatial atomic layer deposition
204Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
205Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
206Study on the characteristics of aluminum thin films prepared by atomic layer deposition
207Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
208Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
209Capacitance spectroscopy of gate-defined electronic lattices
210Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
211Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
212Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
213Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
214Residual stress study of thin films deposited by atomic layer deposition
215High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
216Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
217Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
218Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
219RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
220Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
221Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
222Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
223Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
224Atomic layer deposition of metal-oxide thin films on cellulose fibers
225Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
226Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
227Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
228Atomic layer epitaxy for quantum well nitride-based devices
229Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
230Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
231Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
232Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
233Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
234Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
235Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
236Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
237Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
238Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
239Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
240The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
241Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
242Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
243Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
244Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
245Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
246AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
247Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
248N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
249Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
250Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
251Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
252Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
253Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
254Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
255Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
256Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
257Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
258Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
259Experimental verification of electro-refractive phase modulation in graphene
260Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
261Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
262Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
263Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
264Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
265Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
266Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
267Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
268Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
269Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
270Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
271Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
272Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
273Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
274Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
275Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
276DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
277Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
278Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
279Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
280Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
281Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
282Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
283Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
284Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
285Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
286Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
287Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
288Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
289Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
290Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
291Optical in situ monitoring of plasma-enhanced atomic layer deposition process
292Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
293Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
294Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
295Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
296Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
297Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
298Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
299Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
300AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
301Breakdown and Protection of ALD Moisture Barrier Thin Films
302Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
303Advances in the fabrication of graphene transistors on flexible substrates
304Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
305Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
306Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
307Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
308Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
309Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
310Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
311Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
312Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
313Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
314Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
315Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
316Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
317Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
318Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
319Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
320PEALD AlN: controlling growth and film crystallinity
321Hafnia and alumina on sulphur passivated germanium
322Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
323On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
324Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
325Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
326Energy-enhanced atomic layer deposition for more process and precursor versatility
327Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
328Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
329In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
330Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
331Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
332Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
333Method of Fabrication for Encapsulated Polarizing Resonant Gratings
334AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
335Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
336Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
337Structural and optical characterization of low-temperature ALD crystalline AlN
338Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
339Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
340High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
341The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
342Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
343Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
344Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
345Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
346Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
347On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
348Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
349Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
350Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
351Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
352Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
353Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
354Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
355A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
356Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
357Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
358Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
359Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
360Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
361Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
362Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
363Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
364823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
365Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
366Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
367Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
368Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
369Tribological properties of thin films made by atomic layer deposition sliding against silicon
370Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
371Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
372Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
373Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
374Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
375Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
376Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
377Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
378Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
379Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
380Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
381Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
382Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
383Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
384Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
385Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
386Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
387AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
388Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
389ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
390Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
391On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
392Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
393Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
394Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
395Lithium-Iron (III) Fluoride Battery with Double Surface Protection
396Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
397Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
398A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
399Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
400Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
401Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
402MANOS performance dependence on ALD Al2O3 oxidation source
403Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
404Encapsulation method for atom probe tomography analysis of nanoparticles
405Perspectives on future directions in III-N semiconductor research
406Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
407Protective capping and surface passivation of III-V nanowires by atomic layer deposition
408Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
409Properties of AlN grown by plasma enhanced atomic layer deposition
410Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
411The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
412Atomic layer epitaxy for quantum well nitride-based devices
413Radical Enhanced Atomic Layer Deposition of Metals and Oxides
414Crystalline growth of AlN thin films by atomic layer deposition
415Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
416Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
417Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
418Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
419Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
420Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
421Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
422AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
423Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
424Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
425Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
426Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
427Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
428Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
429Optical display film as flexible and light trapping substrate for organic photovoltaics
430Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
43146-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
432Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
433Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
434Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
435Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
436Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
437Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
438Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
439Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
440Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
441An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
442Protective capping and surface passivation of III-V nanowires by atomic layer deposition
443Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
444AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
445High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
446Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
447Nitride passivation of the interface between high-k dielectrics and SiGe
448PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
449Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
450AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
451Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
452Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
453Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
454A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
455Trapped charge densities in Al2O3-based silicon surface passivation layers
456Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
457On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
458Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
459Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
460Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
461Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
462Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
463Damage evaluation in graphene underlying atomic layer deposition dielectrics
464Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
465Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
466Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
467Dynamic tuning of plasmon resonance in the visible using graphene
468Perspectives on future directions in III-N semiconductor research
469Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
470Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
471Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
472Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
473Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
474Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
475Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
476Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
477Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
478Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
479DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
480Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
481Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
482Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
483Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
484Plasma enhanced atomic layer deposition of aluminum sulfide thin films
485Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
486Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
487Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
488Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
489The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
490In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
491High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
492Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
493Breakdown and Protection of ALD Moisture Barrier Thin Films
494Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
495'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
496Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
497Sub-nanometer heating depth of atomic layer annealing
498Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
499Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
500Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
501Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
502Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
503Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
504AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
505Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
506Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
507Mechanical properties of thin-film Parylene-metal-Parylene devices
508Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
509Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
510The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
511Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
512Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
513AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
514GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
515Nitride memristors
516Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
517On the equilibrium concentration of boron-oxygen defects in crystalline silicon
518Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
519Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
520Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
521Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
522Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
523Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
524Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
525Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
526Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
527Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
528Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
529Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
530Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
531High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
532Densification of Thin Aluminum Oxide Films by Thermal Treatments
533Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
534In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
535Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
536Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
537On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
538Single-Cell Photonic Nanocavity Probes
539Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
540Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
541Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
542Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
543Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
544Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
545Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
546Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
547Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
548Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
549Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
550Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
551Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
552Optimization of the Surface Structure on Black Silicon for Surface Passivation
553Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
554Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
555Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
556Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
557Fiber-matrix interface reinforcement using Atomic Layer Deposition
558Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
559Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
560Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
561Optical and Electrical Properties of AlxTi1-xO Films
562Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
563Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
564ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
565Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
566Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
567Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
568Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
569Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
570Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
571Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
572Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
573Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
574Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
575Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
576Band alignment of Al2O3 with (-201) β-Ga2O3
577Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
578Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
579TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
580Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
581Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
582Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
583Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
584Charge effects of ultrafine FET with nanodot type floating gate
585Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
586Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
587Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
588MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
589Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
590Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
591Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
592Very high frequency plasma reactant for atomic layer deposition
593A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
594Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
595Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
596Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks