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Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

Type:
Journal
Info:
Journal of Applied Physics 120, 015103 (2016)
Date:
2016-06-21
DOI:
http://dx.doi.org/10.1063/1.4955165

Author Information

Name Institution
Scott W. FongStanford University
Aditya SoodStanford University
Liang ChenXi'an Jiaotong University
Niru KumariHewlett-Packard
Mehdi AsheghiStanford University
Kenneth E. GoodsonStanford University
Gary A. GibsonHewlett-Packard
H.-S. P. WongStanford University

Films

Plasma SiNx

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thermal Conductivity
Analysis: Custom
Diagnostic: Custom

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Al2O3
SiO2

Notes

910