About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 392 record(s).

NumberTitle
1Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
2Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
3Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
4Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
5Modal properties of a strip-loaded horizontal slot waveguide
6Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
7Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
8Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
9Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
10Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
11Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
12Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
13Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
14Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
15Atomic layer epitaxy for quantum well nitride-based devices
16An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
17Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
18Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
19Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
20Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
21Gallium nitride thin films by microwave plasma-assisted ALD
22Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
23In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
24Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
25Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
26Fully CMOS-compatible titanium nitride nanoantennas
27In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
28Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
29Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
30Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
31Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
32Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
33Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
34AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
35Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
36Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
37Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
38Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
39Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
40Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
41The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
42Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
43Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
44Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
45Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
46Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
47Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
48Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
49Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
50Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
51Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
52Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
53Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
54The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
55Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
56Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
57Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
58GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
59Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
60Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
61High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
62PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
63Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
64Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
65Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
66Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
67Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
68Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
69New materials for memristive switching
70Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
71Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
72Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
73Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
74AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
75Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
76Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
77Sub-nanometer heating depth of atomic layer annealing
78Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
79The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
80Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
81In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
82Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
83Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
84Analysis of nitrogen species in titanium oxynitride ALD films
85AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
86Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
87Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
88Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
89A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
90PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
91Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
92Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
93Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
94Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
95Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
96Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
97Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
98Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
99XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
100Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
101Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
102Trilayer Tunnel Selectors for Memristor Memory Cells
103Plasma enhanced atomic layer deposition of SiNx:H and SiO2
104In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
105Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
106Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
107ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
108Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
109Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
110Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
111Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
112Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
113Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
114Performance of Samples with Novel SRF Materials and Growth Techniques
115Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
116Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
117Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
118A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
119Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
120Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
121Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
122AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
123Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
124Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
125Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
126Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
127Nonvolatile Capacitive Crossbar Array for In-Memory Computing
128Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
129Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
130Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
131Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
132Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
133TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
134Annealing behavior of ferroelectric Si-doped HfO2 thin films
135Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
136The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
137Perspectives on future directions in III-N semiconductor research
138Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
139In-gap states in titanium dioxide and oxynitride atomic layer deposited films
140Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
141Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
142Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
143Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
144Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
145Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
146Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
147Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
148Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
149Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
150Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
151Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
152Plasma-enhanced atomic layer deposition of titanium vanadium nitride
153Gadolinium nitride films deposited using a PEALD based process
154Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
155A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
156Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
157In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
158Atomic layer epitaxy for quantum well nitride-based devices
159Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
160Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
161Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
162Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
163Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
164Perspectives on future directions in III-N semiconductor research
165Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
166Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
167Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
168Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
169Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
170Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
171The effects of plasma treatment on the thermal stability of HfO2 thin films
172Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
173Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
174Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
175Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
176Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
177Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
178Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
179Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
180Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
181Atomic Layer Deposition of the Solid Electrolyte LiPON
182Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
183Sub-10-nm ferroelectric Gd-doped HfO2 layers
184Atmospheric pressure plasma enhanced spatial ALD of silver
185Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
186Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
187Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
188Plasma-enhanced atomic layer deposition of titanium vanadium nitride
189Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
190Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
191Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
192Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
193Atomic Layer Deposition of Niobium Nitride from Different Precursors
194Atomic layer deposition of titanium nitride from TDMAT precursor
195Radical Enhanced Atomic Layer Deposition of Metals and Oxides
196Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
197High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
198AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
199Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
200Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
201Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
202Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
203Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
204ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
205Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
206ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
207Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
208Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
209Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
210Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
211A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
212Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
213Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
214Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
215Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
216Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
217Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
218Microwave properties of superconducting atomic-layer deposited TiN films
219Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
220High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
221Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
222A route to low temperature growth of single crystal GaN on sapphire
223Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
224Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
225Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
226Film Uniformity in Atomic Layer Deposition
227Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
228Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
229Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
230Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
231Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
232Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
233Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
234Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
235Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
236Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
237Nitride memristors
238In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
239In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
240Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
241Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
242Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
243Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
244Perspectives on future directions in III-N semiconductor research
245Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
246Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
247High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
248Nitride memristors
249Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
250Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
251New materials for memristive switching
252Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
253Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
254Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
255Atomic layer epitaxy for quantum well nitride-based devices
256Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
257Perspectives on future directions in III-N semiconductor research
258Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
259Atomic layer deposition of titanium nitride for quantum circuits
260SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
261Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
262Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
263AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
264Plasma-enhanced atomic layer deposition of Co on metal surfaces
265Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
266Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
267Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
268Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
269RF Characterization of Novel Superconducting Materials and Multilayers
270Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
271Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
272Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
273Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
274Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
275Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
276Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
277Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
278Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
279Silicon nanowire networks for multi-stage thermoelectric modules
280Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
281Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
282Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
283Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
284Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
285Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
286Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
287Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
288RF Characterization of Novel Superconducting Materials and Multilayers
289Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
290Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
291Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
292Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
293Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
294Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
295Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
296Plasma-enhanced atomic layer deposition of superconducting niobium nitride
297Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
298Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
299Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
300Fabrication and deformation of three-dimensional hollow ceramic nanostructures
301Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
302The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
303Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
304Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
305Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
306High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
307Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
308Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
309Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
310Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
311Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
312Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
313Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
314Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
315ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
316Fundamental beam studies of radical enhanced atomic layer deposition of TiN
317Plasma-enhanced atomic layer deposition of tungsten nitride
318Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
319Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
320Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
321Structural and optical characterization of low-temperature ALD crystalline AlN
322Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
323Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
324Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
325Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
326AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
327Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
328Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
329Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
330Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
331Plasma-enhanced atomic layer deposition of titanium vanadium nitride
332Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
333Radical Enhanced Atomic Layer Deposition of Metals and Oxides
334The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
335Plasma-enhanced atomic layer deposition of vanadium nitride
336Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
337Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
338Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
339Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
340Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
341Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
342Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
343Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
344Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
345Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments