Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 392 record(s).

NumberTitle
1Nonvolatile Capacitive Crossbar Array for In-Memory Computing
2Atomic layer epitaxy for quantum well nitride-based devices
3GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
4Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
5Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
6New materials for memristive switching
7High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
8Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
9Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
10Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
11Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
12The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
13Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
14In-gap states in titanium dioxide and oxynitride atomic layer deposited films
15In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
16Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
17Atomic layer deposition of titanium nitride from TDMAT precursor
18Radical Enhanced Atomic Layer Deposition of Metals and Oxides
19Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
20Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
21Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
22Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
23Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
24AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
25Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
26Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
27Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
28A route to low temperature growth of single crystal GaN on sapphire
29Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
30Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
31Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
32Plasma-enhanced atomic layer deposition of titanium vanadium nitride
33Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
34In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
35High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
36Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
37RF Characterization of Novel Superconducting Materials and Multilayers
38Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
39Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
40The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
41Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
42Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
43Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
44A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
45Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
46Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
47AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
48AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
49Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
50Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
51Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
52Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
53Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
54A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
55An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
56Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
57Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
58Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
59Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
60Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
61High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
62Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
63Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
64The effects of plasma treatment on the thermal stability of HfO2 thin films
65Perspectives on future directions in III-N semiconductor research
66Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
67Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
68Plasma-enhanced atomic layer deposition of Co on metal surfaces
69Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
70Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
71Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
72Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
73Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
74Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
75Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
76Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
77Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
78Analysis of nitrogen species in titanium oxynitride ALD films
79AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
80Plasma-enhanced atomic layer deposition of titanium vanadium nitride
81In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
82Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
83Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
84RF Characterization of Novel Superconducting Materials and Multilayers
85Annealing behavior of ferroelectric Si-doped HfO2 thin films
86The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
87Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
88Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
89Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
90Nitride memristors
91Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
92Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
93New materials for memristive switching
94Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
95The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
96Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
97Atomic Layer Deposition of Niobium Nitride from Different Precursors
98Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
99Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
100Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
101Fabrication and deformation of three-dimensional hollow ceramic nanostructures
102Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
103Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
104Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
105Atomic layer deposition of titanium nitride for quantum circuits
106Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
107Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
108Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
109Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
110Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
111Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
112Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
113Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
114Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
115The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
116Modal properties of a strip-loaded horizontal slot waveguide
117Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
118Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
119Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
120Sub-10-nm ferroelectric Gd-doped HfO2 layers
121Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
122Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
123Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
124Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
125In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
126ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
127Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
128Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
129Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
130Plasma-enhanced atomic layer deposition of tungsten nitride
131Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
132PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
133Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
134The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
135Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
136Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
137Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
138Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
139Perspectives on future directions in III-N semiconductor research
140Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
141Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
142Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
143Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
144Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
145In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
146In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
147Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
148Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
149Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
150AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
151Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
152Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
153Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
154Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
155Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
156Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
157Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
158ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
159Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
160Radical Enhanced Atomic Layer Deposition of Metals and Oxides
161Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
162Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
163Microwave properties of superconducting atomic-layer deposited TiN films
164Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
165Atomic Layer Deposition of the Solid Electrolyte LiPON
166Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
167Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
168Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
169Film Uniformity in Atomic Layer Deposition
170Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
171Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
172Fully CMOS-compatible titanium nitride nanoantennas
173Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
174Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
175Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
176Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
177Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
178Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
179Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
180Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
181Atomic layer epitaxy for quantum well nitride-based devices
182Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
183Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
184Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
185A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
186Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
187AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
188Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
189Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
190Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
191Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
192Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
193Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
194Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
195Sub-nanometer heating depth of atomic layer annealing
196Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
197Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
198Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
199Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
200Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
201ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
202Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
203Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
204Perspectives on future directions in III-N semiconductor research
205Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
206Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
207Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
208SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
209Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
210Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
211Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
212Structural and optical characterization of low-temperature ALD crystalline AlN
213Plasma enhanced atomic layer deposition of SiNx:H and SiO2
214Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
215Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
216Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
217Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
218Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
219Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
220Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
221Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
222Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
223Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
224Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
225High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
226Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
227Plasma-enhanced atomic layer deposition of superconducting niobium nitride
228Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
229Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
230Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
231Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
232Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
233Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
234Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
235Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
236Perspectives on future directions in III-N semiconductor research
237Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
238Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
239Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
240Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
241Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
242Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
243Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
244A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
245Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
246Atomic layer epitaxy for quantum well nitride-based devices
247Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
248Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
249Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
250Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
251Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
252Fundamental beam studies of radical enhanced atomic layer deposition of TiN
253Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
254XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
255Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
256Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
257Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
258Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
259Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
260High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
261Trilayer Tunnel Selectors for Memristor Memory Cells
262Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
263Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
264Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
265Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
266Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
267Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
268Plasma-enhanced atomic layer deposition of titanium vanadium nitride
269Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
270Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
271Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
272Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
273Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
274Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
275ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
276Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
277Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
278Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
279Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
280Gallium nitride thin films by microwave plasma-assisted ALD
281Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
282PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
283Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
284Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
285Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
286Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
287Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
288Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
289Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
290Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
291Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
292Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
293Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
294Silicon nanowire networks for multi-stage thermoelectric modules
295Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
296Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
297Atmospheric pressure plasma enhanced spatial ALD of silver
298Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
299Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
300Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
301Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
302Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
303Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
304Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
305Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
306Nitride memristors
307Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
308Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
309Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
310Performance of Samples with Novel SRF Materials and Growth Techniques
311Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
312Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
313Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
314AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
315Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
316TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
317Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
318Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
319Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
320Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
321Gadolinium nitride films deposited using a PEALD based process
322Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
323Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
324In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
325Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
326Plasma-enhanced atomic layer deposition of vanadium nitride
327Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
328Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
329Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
330Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
331Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
332Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
333Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
334Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
335Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
336Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
337Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
338Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
339Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
340Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
341Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
342Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
343Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
344Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
345Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique