| 1 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 2 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 3 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 4 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 5 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 6 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 7 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 8 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 9 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 10 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 11 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 12 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 13 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 14 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 15 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 16 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 17 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 18 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 19 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 20 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 21 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 22 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 23 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 24 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 25 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 26 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 27 | A route to low temperature growth of single crystal GaN on sapphire |
| 28 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 29 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 30 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 31 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 32 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 33 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 34 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 35 | Nitride memristors |
| 36 | Performance of Samples with Novel SRF Materials and Growth Techniques |
| 37 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 38 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 39 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 40 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 41 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 42 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 43 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 44 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 45 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
| 46 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 47 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 48 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 49 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 50 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 51 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
| 52 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 53 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 54 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 55 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 56 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 57 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 58 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 59 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 60 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 61 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 62 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 63 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 64 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 65 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 66 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 67 | Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes |
| 68 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 69 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 70 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 71 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 72 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 73 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
| 74 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 75 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 76 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 77 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 78 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 79 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 80 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 81 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
| 82 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 83 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
| 84 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
| 85 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 86 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 87 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 88 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 89 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 90 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 91 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 92 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 93 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 94 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 95 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 96 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 97 | The effects of plasma treatment on the thermal stability of HfO2 thin films |
| 98 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 99 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 100 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 101 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 102 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 103 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 104 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 105 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 106 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 107 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 108 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
| 109 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 110 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 111 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 112 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 113 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 114 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 115 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 116 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 117 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 118 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 119 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 120 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 121 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 122 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 123 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 124 | Gallium nitride thin films by microwave plasma-assisted ALD |
| 125 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 126 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 127 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 128 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 129 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
| 130 | Atomic layer epitaxy for quantum well nitride-based devices |
| 131 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
| 132 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 133 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 134 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 135 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 136 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 137 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 138 | Atomic layer epitaxy for quantum well nitride-based devices |
| 139 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 140 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 141 | Perspectives on future directions in III-N semiconductor research |
| 142 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 143 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 144 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
| 145 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 146 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 147 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 148 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 149 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 150 | Perspectives on future directions in III-N semiconductor research |
| 151 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
| 152 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 153 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 154 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 155 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 156 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
| 157 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 158 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 159 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
| 160 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 161 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 162 | New materials for memristive switching |
| 163 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 164 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 165 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 166 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 167 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 168 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 169 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 170 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 171 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 172 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 173 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
| 174 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 175 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 176 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 177 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 178 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 179 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 180 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
| 181 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 182 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 183 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 184 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 185 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 186 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 187 | Perspectives on future directions in III-N semiconductor research |
| 188 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 189 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 190 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 191 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 192 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 193 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 194 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 195 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 196 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 197 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 198 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 199 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 200 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 201 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 202 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 203 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 204 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 205 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 206 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
| 207 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 208 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 209 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 210 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 211 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 212 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 213 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 214 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 215 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 216 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 217 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 218 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 219 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 220 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 221 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 222 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 223 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 224 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 225 | Gadolinium nitride films deposited using a PEALD based process |
| 226 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 227 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 228 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 229 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 230 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 231 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 232 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 233 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 234 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 235 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 236 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 237 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 238 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 239 | Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 240 | New materials for memristive switching |
| 241 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 242 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 243 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 244 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 245 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 246 | Film Uniformity in Atomic Layer Deposition |
| 247 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 248 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 249 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 250 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 251 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 252 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
| 253 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
| 254 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 255 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 256 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 257 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 258 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 259 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 260 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 261 | Nitride memristors |
| 262 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 263 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 264 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 265 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 266 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 267 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 268 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 269 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 270 | Atomic layer deposition of titanium nitride for quantum circuits |
| 271 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 272 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 273 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 274 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 275 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 276 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 277 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 278 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 279 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 280 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 281 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 282 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 283 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 284 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 285 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 286 | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
| 287 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 288 | Modal properties of a strip-loaded horizontal slot waveguide |
| 289 | Sub-nanometer heating depth of atomic layer annealing |
| 290 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 291 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 292 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 293 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
| 294 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 295 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 296 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 297 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 298 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 299 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 300 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 301 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 302 | Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes |
| 303 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 304 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 305 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 306 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 307 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 308 | Perspectives on future directions in III-N semiconductor research |
| 309 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 310 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 311 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 312 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 313 | Atomic layer epitaxy for quantum well nitride-based devices |
| 314 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 315 | Fully CMOS-compatible titanium nitride nanoantennas |
| 316 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 317 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 318 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 319 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 320 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 321 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 322 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
| 323 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 324 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 325 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 326 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 327 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 328 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 329 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 330 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 331 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 332 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 333 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 334 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 335 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 336 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 337 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 338 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 339 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 340 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 341 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
| 342 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 343 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 344 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 345 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
