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N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 392 record(s).

NumberTitle
1Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
2Microwave properties of superconducting atomic-layer deposited TiN films
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
5Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
9Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
10Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
11Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
12RF Characterization of Novel Superconducting Materials and Multilayers
13Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
14Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
15Nonvolatile Capacitive Crossbar Array for In-Memory Computing
16Perspectives on future directions in III-N semiconductor research
17Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
18Fundamental beam studies of radical enhanced atomic layer deposition of TiN
19Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
20High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
21Annealing behavior of ferroelectric Si-doped HfO2 thin films
22Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
23Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
24The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
25Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
26Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
27Nitride memristors
28A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
29Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
30Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
31Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
32Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
33Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
34Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
35Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
36Atomic layer epitaxy for quantum well nitride-based devices
37Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
38Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
39Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
40Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
41Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
42Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
43The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
44Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
45Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
46AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
47Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
48Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
49Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
50Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
51Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
52Fabrication and deformation of three-dimensional hollow ceramic nanostructures
53Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
54The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
55Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
56Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
57Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
58RF Characterization of Novel Superconducting Materials and Multilayers
59Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
60Plasma-enhanced atomic layer deposition of superconducting niobium nitride
61Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
62Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
63Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
64Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
65Fully CMOS-compatible titanium nitride nanoantennas
66Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
67Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
68Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
69A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
70Performance of Samples with Novel SRF Materials and Growth Techniques
71Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
72Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
73Perspectives on future directions in III-N semiconductor research
74Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
75Sub-nanometer heating depth of atomic layer annealing
76Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
77Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
78Gallium nitride thin films by microwave plasma-assisted ALD
79Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
80Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
81Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
82Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
83Plasma-enhanced atomic layer deposition of titanium vanadium nitride
84Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
85Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
86Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
87Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
88Film Uniformity in Atomic Layer Deposition
89Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
90Plasma-enhanced atomic layer deposition of titanium vanadium nitride
91Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
92High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
93Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
94Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
95Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
96Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
97Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
98Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
99Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
100Silicon nanowire networks for multi-stage thermoelectric modules
101Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
102Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
103Atomic layer epitaxy for quantum well nitride-based devices
104Atmospheric pressure plasma enhanced spatial ALD of silver
105Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
106Atomic Layer Deposition of the Solid Electrolyte LiPON
107AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
108TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
109Perspectives on future directions in III-N semiconductor research
110Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
111The effects of plasma treatment on the thermal stability of HfO2 thin films
112Plasma-enhanced atomic layer deposition of vanadium nitride
113Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
114Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
115A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
116Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
117Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
118Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
119Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
120Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
121Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
122Plasma-enhanced atomic layer deposition of titanium vanadium nitride
123Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
124Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
125Sub-10-nm ferroelectric Gd-doped HfO2 layers
126Radical Enhanced Atomic Layer Deposition of Metals and Oxides
127Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
128Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
129The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
130Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
131Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
132Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
133Radical Enhanced Atomic Layer Deposition of Metals and Oxides
134Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
135Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
136Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
137Atomic layer deposition of titanium nitride for quantum circuits
138Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
139Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
140New materials for memristive switching
141SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
142Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
143Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
144An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
145Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
146Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
147Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
148Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
149In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
150Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
151Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
152Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
153Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
154Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
155Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
156Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
157Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
158Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
159Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
160Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
161Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
162AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
163Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
164ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
165High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
166Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
167Plasma-enhanced atomic layer deposition of Co on metal surfaces
168In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
169AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
170Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
171Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
172Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
173Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
174Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
175PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
176Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
177Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
178Atomic layer deposition of titanium nitride from TDMAT precursor
179Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
180Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
181Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
182Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
183Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
184Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
185Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
186Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
187Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
188Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
189Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
190Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
191ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
192Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
193AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
194Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
195Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
196Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
197Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
198Nitride memristors
199Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
200Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
201Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
202Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
203Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
204Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
205In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
206In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
207Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
208Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
209New materials for memristive switching
210Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
211Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
212Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
213Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
214Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
215Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
216Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
217Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
218Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
219Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
220Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
221Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
222Atomic layer epitaxy for quantum well nitride-based devices
223Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
224Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
225Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
226Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
227Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
228Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
229Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
230Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
231Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
232Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
233Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
234Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
235Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
236Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
237High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
238Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
239Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
240Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
241Plasma-enhanced atomic layer deposition of tungsten nitride
242ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
243Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
244Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
245A route to low temperature growth of single crystal GaN on sapphire
246Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
247Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
248Structural and optical characterization of low-temperature ALD crystalline AlN
249Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
250A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
251Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
252ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
253Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
254Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
255Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
256Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
257Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
258Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
259Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
260Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
261Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
262Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
263Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
264Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
265Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
266Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
267Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
268Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
269Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
270Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
271Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
272Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
273Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
274Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
275In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
276Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
277Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
278Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
279Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
280Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
281Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
282Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
283Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
284Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
285Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
286Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
287Perspectives on future directions in III-N semiconductor research
288Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
289Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
290Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
291Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
292Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
293Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
294GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
295XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
296Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
297Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
298Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
299Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
300Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
301The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
302Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
303Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
304Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
305High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
306Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
307Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
308Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
309AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
310In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
311Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
312Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
313Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
314PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
315Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
316Atomic Layer Deposition of Niobium Nitride from Different Precursors
317Trilayer Tunnel Selectors for Memristor Memory Cells
318Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
319AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
320Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
321Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
322Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
323Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
324Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
325Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
326Modal properties of a strip-loaded horizontal slot waveguide
327Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
328Gadolinium nitride films deposited using a PEALD based process
329Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
330Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
331In-gap states in titanium dioxide and oxynitride atomic layer deposited films
332The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
333Plasma enhanced atomic layer deposition of SiNx:H and SiO2
334Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
335Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
336Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
337Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
338Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
339Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
340Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
341Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
342Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
343Analysis of nitrogen species in titanium oxynitride ALD films
344Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
345Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition