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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 392 record(s).

NumberTitle
1Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
2Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
3Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
4Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
5Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
6Perspectives on future directions in III-N semiconductor research
7Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
8Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
9Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
10Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
11Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
12Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
13Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
14The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
15XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
16Plasma enhanced atomic layer deposition of SiNx:H and SiO2
17Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
18Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
19Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
20Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
21Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
22Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
23Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
24Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
25Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
26Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
27Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
28Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
29Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
30Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
31Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
32Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
33Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
34Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
35Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Atomic layer epitaxy for quantum well nitride-based devices
37Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
38Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
39Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
40Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
41Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
42Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
43Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
44ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
45Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
46Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
47Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
48Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
49PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
50Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
51Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
52Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
53Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
54An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
55Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
56Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
57ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
58Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
59Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
60Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
61Perspectives on future directions in III-N semiconductor research
62Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
63Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
64Plasma-enhanced atomic layer deposition of Co on metal surfaces
65Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
66Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
67Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
68Plasma-enhanced atomic layer deposition of titanium vanadium nitride
69Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
70GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
71Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
72Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
73Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
74Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
75Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
76Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
77A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
78Atomic layer deposition of titanium nitride from TDMAT precursor
79Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
80Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
81Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
82Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
83Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
84Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
85Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
86Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
87Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
88Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
89Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
90A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
91Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
92Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
93High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
94Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
95Atomic layer deposition of titanium nitride for quantum circuits
96Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
97Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
98Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
99Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
100Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
101Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
102Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
103Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
104A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
105Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
106Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
107Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
108Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
109Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
110Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
111Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
112A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
113Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
114Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
115High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
116Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
117Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
118Atomic Layer Deposition of Niobium Nitride from Different Precursors
119Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
120Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
121Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
122Radical Enhanced Atomic Layer Deposition of Metals and Oxides
123Nonvolatile Capacitive Crossbar Array for In-Memory Computing
124Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
125Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
126Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
127Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
128Microwave properties of superconducting atomic-layer deposited TiN films
129Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
130Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
131Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
132Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
133Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
134Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
135Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
136SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
137Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
138In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
139RF Characterization of Novel Superconducting Materials and Multilayers
140In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
141Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
142Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
143Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
144The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
145Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
146Perspectives on future directions in III-N semiconductor research
147RF Characterization of Novel Superconducting Materials and Multilayers
148Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
149Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
150Plasma-enhanced atomic layer deposition of tungsten nitride
151Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
152The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
153Plasma-enhanced atomic layer deposition of titanium vanadium nitride
154Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
155Fully CMOS-compatible titanium nitride nanoantennas
156Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
157Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
158Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
159Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
160Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
161Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
162Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
163Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
164Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
165Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
166Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
167Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
168Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
169High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
170Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
171Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
172Annealing behavior of ferroelectric Si-doped HfO2 thin films
173Perspectives on future directions in III-N semiconductor research
174Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
175Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
176Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
177Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
178Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
179Plasma-enhanced atomic layer deposition of superconducting niobium nitride
180Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
181Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
182Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
183Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
184Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
185Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
186Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
187Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
188The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
189In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
190Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
191Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
192Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
193In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
194Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
195Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
196Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
197Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
198Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
199Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
200Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
201Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
202Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
203Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
204The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
205Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
206Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
207Sub-nanometer heating depth of atomic layer annealing
208Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
209Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
210Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
211Atomic Layer Deposition of the Solid Electrolyte LiPON
212PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
213Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
214Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
215Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
216Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
217Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
218Radical Enhanced Atomic Layer Deposition of Metals and Oxides
219Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
220Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
221In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
222Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
223Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
224Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
225Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
226Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
227Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
228Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
229Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
230Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
231Nitride memristors
232Gadolinium nitride films deposited using a PEALD based process
233Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
234High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
235The effects of plasma treatment on the thermal stability of HfO2 thin films
236Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
237Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
238Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
239Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
240Modal properties of a strip-loaded horizontal slot waveguide
241Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
242Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
243Plasma-enhanced atomic layer deposition of titanium vanadium nitride
244ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
245Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
246Gallium nitride thin films by microwave plasma-assisted ALD
247ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
248Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
249Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
250The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
251Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
252Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
253Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
254Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
255Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
256A route to low temperature growth of single crystal GaN on sapphire
257Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
258Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
259Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
260Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
261Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
262Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
263Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
264Trilayer Tunnel Selectors for Memristor Memory Cells
265Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
266Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
267Structural and optical characterization of low-temperature ALD crystalline AlN
268Plasma-enhanced atomic layer deposition of vanadium nitride
269Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
270Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
271Nitride memristors
272AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
273Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
274Atomic layer epitaxy for quantum well nitride-based devices
275Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
276Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
277AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
278New materials for memristive switching
279Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
280Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
281Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
282Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
283Atomic layer epitaxy for quantum well nitride-based devices
284Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
285TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
286Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
287Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
288Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
289Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
290Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
291Fundamental beam studies of radical enhanced atomic layer deposition of TiN
292Performance of Samples with Novel SRF Materials and Growth Techniques
293Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
294Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
295Silicon nanowire networks for multi-stage thermoelectric modules
296Fabrication and deformation of three-dimensional hollow ceramic nanostructures
297Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
298Film Uniformity in Atomic Layer Deposition
299Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
300High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
301Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
302AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
303Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
304AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
305Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
306Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
307Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
308AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
309Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
310Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
311Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
312Analysis of nitrogen species in titanium oxynitride ALD films
313Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
314Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
315Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
316Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
317Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
318Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
319Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
320New materials for memristive switching
321Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
322Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
323Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
324AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
325Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
326Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
327Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
328Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
329Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
330AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
331Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
332In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
333Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
334Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
335Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
336Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
337Sub-10-nm ferroelectric Gd-doped HfO2 layers
338Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
339Atmospheric pressure plasma enhanced spatial ALD of silver
340Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
341In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
342Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
343In-gap states in titanium dioxide and oxynitride atomic layer deposited films
344Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
345Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy