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Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

Type:
Journal
Info:
Ceramics International 44 (2018) 20890-20895
Date:
2018-08-10
DOI:
https://doi.org/10.1016/j.ceramint.2018.08.095

Author Information

Name Institution
Ju-Hwan HanHanyang University
Jin-Myung ChoiHanyang University
Seong-Hyeon LeeHanyang University
Woojin JeonDankook University
Jin-Seong ParkHanyang University

Films

Plasma SiNx

Hardware used: iOV d150, iSAC Co. Ltd.
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 60-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: FTIR reflectance
Diagnostic: Nicolet iS50 FTIR

Substrates

Silicon

Notes

1647