Di(isopropylamino)Silane, (i-PrHN)₂SiH₂, DIPAS, CAS# 908831-34-5

Your search for publications using this chemistry returned 10 record(s).

Number	Title
1	Low temperature SiO_x thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
2	Bottom-up plasma-enhanced atomic layer deposition of SiO₂ by utilizing growth inhibition using NH₃ plasma pre-treatment for seamless gap-fill process
3	Investigating the interface characteristics of high-k ZrO₂/SiO₂ stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
4	A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
5	Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
6	Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
7	Chemistry of SiN_x thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N₂ plasma
8	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
9	A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
10	Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices

Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS, CAS# 908831-34-5