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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS, CAS# 908831-34-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s).

NumberTitle
1Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
2Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
3Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
4A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
5Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
6A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
7Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
8Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
9Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
10Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma