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Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020902 (2019)
Date:
2018-12-13
DOI:
http://dx.doi.org/10.1116/1.5079573

Author Information

Name Institution
Donghyuk ShinYonsei University
Heungseop SongYonsei University
Ji-eun JeongYonsei University
Heungsoo ParkYonsei University
Dae-Hong KoYonsei University

Films

Plasma SiO2

Hardware used: ASM Genitech PEALD
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker IFS66v/S

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Etch Rate
Analysis: Custom
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Silicon

Notes

O2 flow continuous. GPC may have CVD component from gas phase reactions between DIPAS pulse and O2.
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