About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

ASM Genitech PEALD Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using ASM Genitech PEALD hardware returned 20 records.

NumberTitle
1Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
2Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
3The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
4Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
5Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
6Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
7Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
8Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
9Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
10Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
11Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
12Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
13Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
14Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
15Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
16A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
17Flexible Memristive Memory Array on Plastic Substrates
18Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
19Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
20Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method