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Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Type:
Journal
Info:
Journal of Electroceramics, v. 17, n. 2, p. 145--149 (2006)
Date:
2006-08-17
DOI:
http://dx.doi.org/10.1007/s10832-006-0461-5

Author Information

Name Institution
G. X. LiuDong-Eui University
F. K. ShanDong-Eui University
J. J. ParkDong-Eui University
Won-Jae LeeDong-Eui University
G. H. LeeDong-Eui University
I. S. KimDong-Eui University
B. C. ShinDong-Eui University
Soon-Gil YoonChungnam National University

Films

Plasma Ga2O3

Hardware used: ASM Genitech PEALD
[(CH3)2GaNH2]3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma GaTiOx

Hardware used: ASM Genitech PEALD
[(CH3)2GaNH2]3
CAS#: 0-0-0
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4200

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4200

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: VG Scientific Microlab 350

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2100H

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1305