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Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A136 (2016)
Date:
2015-12-01
DOI:
http://dx.doi.org/10.1116/1.4937734

Author Information

Name Institution
Sungin SuhSeoul National University
Seung Wook RyuStanford University
Seongjae ChoGachon University
Jun-Rae KimSeoul National University
Seongkyung KimSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma SiNx

Hardware used: ASM Genitech PEALD
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 325C

Plasma SiNx

Hardware used: ASM Genitech PEALD
TEASi, Tetrakis(EthylAmido)Silane, (EtHN)4Si
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 325C

Plasma SiNx

Hardware used: ASM Genitech PEALD
TIPAS, 3IPAS, ((CH3)2CHN)3SiH, Tris(IsoPropyl)AminoSilane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 325C

Plasma SiNx

Hardware used: ASM Genitech PEALD
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 325C

Plasma Sb2Te3

Hardware used: ASM Genitech PEALD
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner L116D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Gaertner L116D

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Characteristic: Electrical Properties
Analysis: -
Diagnostic: HP 4140

Substrates

Silicon

Notes

Investigated adding Ar plasma after Si precursor for activation. Also used multiple Si precursor-Ar plasma steps prior to NH3 plasma step.
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