About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 69 record(s).

NumberTitle
1Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
2CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
3Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
4Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
5Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
6Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
7Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
8SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
9Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
10AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
11Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
12Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
13Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
14Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
15Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
16Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
17The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
18Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
19Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
20Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
21Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
22Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
23Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
24Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
25Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
26High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
27Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
28Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
29Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
30Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
31Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
32Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
33High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
34Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
35Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
36Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
37Challenges in spacer process development for leading-edge high-k metal gate technology
38Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
39Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
40Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
41Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
42Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
43Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
44Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
45Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
46Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
47Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
48Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
49Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
50Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
51Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
52Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
53Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
54Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
55Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
56Plasma enhanced atomic layer deposition of SiNx:H and SiO2
57Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
58Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
59Reliability and parasitic issues in GaN-based power HEMTs: a review
60Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
61Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
62Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
63Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
64Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
65Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
66A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
67Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
68Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
69Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride