| 1 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 2 | Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate |
| 3 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 4 | Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates |
| 5 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 6 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 7 | Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode |
| 8 | Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas |
| 9 | Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate |
| 10 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 11 | Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces |
| 12 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
| 13 | AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate |
| 14 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 15 | Challenges in spacer process development for leading-edge high-k metal gate technology |
| 16 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 17 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 18 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 19 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 20 | Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers |
| 21 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 22 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 23 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 24 | High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure |
| 25 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
| 26 | SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition |
| 27 | Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 28 | CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm |
| 29 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 30 | Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory |
| 31 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 32 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 33 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 34 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 35 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 36 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 37 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 38 | Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer |
| 39 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 40 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 41 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 42 | Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs |
| 43 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 44 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 45 | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition |
| 46 | Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs |
| 47 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 48 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 49 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 50 | Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena |
| 51 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 52 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 53 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 54 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 55 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 56 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 57 | Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests |
| 58 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 59 | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
| 60 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 61 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 62 | Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook |
| 63 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 64 | Reliability and parasitic issues in GaN-based power HEMTs: a review |
| 65 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 66 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 67 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 68 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 69 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
