SiN_x Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiN_x films returned 69 record(s).

Number	Title
1	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
2	Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
3	Challenges in spacer process development for leading-edge high-k metal gate technology
4	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
5	Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
6	AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
7	High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
8	Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
9	Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
10	Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
11	High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
12	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
13	Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
14	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
15	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
16	Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
17	Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
18	Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
19	Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
20	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
21	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
22	Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
23	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
24	Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
25	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
26	Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
27	Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
28	Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
29	Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
30	Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
31	Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
32	Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
33	Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
34	Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
35	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
36	Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
37	Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
38	Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
39	Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
40	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
41	Reliability and parasitic issues in GaN-based power HEMTs: a review
42	Plasma enhanced atomic layer deposition of SiNx:H and SiO2
43	Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
44	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
45	Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
46	Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
47	Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
48	CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
49	Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
50	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
51	Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
52	Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
53	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
54	Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
55	Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
56	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
57	Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
58	Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
59	Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
60	Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
61	SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
62	Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
63	Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
64	Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
65	Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
66	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
67	Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
68	Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
69	Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition