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Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Type:
Journal
Info:
Appl. Sci. 2019, 9, 3531
Date:
2019-08-26
DOI:
http://dx.doi.org/10.3390/app9173531

Author Information

Name Institution
Haewon ChoHanyang University
Namgue LeeHanyang University
Hyeongsu ChoiHanyang University
Hyunwoo ParkHanyang University
Chanwon JungHanyang University
Seokhwi SongHanyang University
Hyunwoo YukHanyang University
Youngjoon KimHanyang University
Jong-Woo KimHanyang University
Keunsik KimHanyang University
Youngtae ChoiHanyang University
Suhyeon ParkHanyang University
Yurim KwonHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
CSN-2, 1,3-di-isopropylamino -2,4-dimethylcyclosilazane
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-600C

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
CSN-2, 1,3-di-isopropylamino -2,4-dimethylcyclosilazane
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Nanoview MG-1000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Nanoview MG-1000

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-7

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Precursor Vapor Pressure
Analysis: -
Diagnostic: -

Substrates

Si(100)

Notes

1553