Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A111 (2018)
Date:
2017-11-07
Author Information
| Name | Institution |
|---|---|
| Toshihiko Iwao | Tokyo Electron Technology Solutions, Ltd. |
| Peter L. G. Ventzek | Tokyo Electron America, Inc. |
| Rochan Upadhyay | Esgee Technologies, Inc. |
| Laxminarayan L. Raja | University of Texas at Austin |
| Hirokazu Ueda | Tokyo Electron Technology Solutions, Ltd. |
| Kiyotaka Ishibashi | Tokyo Electron Technology Solutions, Ltd. |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Silicon |
Notes
| 1099 |