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NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s).

NumberTitle
1Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
2Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
3Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
4Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
5Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
6Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
7Crystalline growth of AlN thin films by atomic layer deposition
8The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
9Tribological properties of thin films made by atomic layer deposition sliding against silicon
10Protective capping and surface passivation of III-V nanowires by atomic layer deposition
11Properties of AlN grown by plasma enhanced atomic layer deposition
12Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
13Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
14Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
15Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
16Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
17Layer-by-layer epitaxial growth of GaN at low temperatures
18Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
19Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
20Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
21Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
22Self-Limiting Growth of GaN at Low Temperatures
23Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
24Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
25P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
26Analysis of nitrogen species in titanium oxynitride ALD films
27The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
28Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
29Protective capping and surface passivation of III-V nanowires by atomic layer deposition
30Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
31In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
32Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
33Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
34Texture of atomic layer deposited ruthenium
35Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
36Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
37Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
38In-gap states in titanium dioxide and oxynitride atomic layer deposited films
39Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
40Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
41Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
42Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
43Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
44Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
45Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
46Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
47AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
48Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
49Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
50Ru thin film grown on TaN by plasma enhanced atomic layer deposition
51Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
52Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
53Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
54Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
55Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
56Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
57Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
58Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
59Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
60Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
61Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
62Atomic layer deposition of titanium nitride from TDMAT precursor
63High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
64PEALD AlN: controlling growth and film crystallinity
65Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
66Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
67Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
68Plasma-enhanced ALD system for SRF cavity
69Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
70Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
71Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
72Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
73Ru thin film grown on TaN by plasma enhanced atomic layer deposition
74Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
75The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
76Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
77Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
78Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
79Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
80Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
81The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
82Tribological properties of thin films made by atomic layer deposition sliding against silicon
83Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
84Nitride passivation of the interface between high-k dielectrics and SiGe
85Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
86Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
87Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
88Protective capping and surface passivation of III-V nanowires by atomic layer deposition
89Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
90Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
91Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
92Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
93Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
94Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
95Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
96Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
97Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
98Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
99The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
100Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
101Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
102Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
103Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
104Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
105Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
106Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
107Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
108A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
109Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
110High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
111Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
112Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
113P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
114PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
115A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
116In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
117Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
118In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
119Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
120Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
121Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
122Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
123Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
124High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
125Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
126823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
127Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
128Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
129Tribological properties of thin films made by atomic layer deposition sliding against silicon
130Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
131Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
132Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
133Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
134Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
135NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
136Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
137Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
138Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
139Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
140Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
141TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
142Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
143Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
144Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
145Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
146Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
147Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
148Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
149Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
150Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
151Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
152Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
153A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
154Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
155Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
156Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
157Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
158Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
159WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
160Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
161Texture of atomic layer deposited ruthenium
162Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
163Silicon surface passivation with atomic layer deposited aluminum nitride
164Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
165Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
166Atomic layer deposition of GaN at low temperatures
167The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
168Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
169Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
170Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
171Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
172Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
173Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
174Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
175Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
176Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
177Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
178Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
179Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
180Formation of Ni silicide from atomic layer deposited Ni
181Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
182Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
183Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
184Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
185A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
186P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
187Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
188Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
189Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
190The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
191Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
192Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
193Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
194Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
195Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
196Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
197Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
198Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
199TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
200Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
201Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
202Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
203Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
204Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
205Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
206Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
207Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
208Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
209Trilayer Tunnel Selectors for Memristor Memory Cells
210Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
211A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
212Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
213Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
214Challenges in spacer process development for leading-edge high-k metal gate technology
215Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
216Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
217Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
218Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
219Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
220Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
221Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
222Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
223Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
224Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
225Plasma-Enhanced Atomic Layer Deposition of Ni
226Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
227Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
228The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
229Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
230Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
231In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
232Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
233GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
234A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
235Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
236Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
237Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
238TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
239Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
240Formation of aluminum nitride thin films as gate dielectrics on Si(100)
241A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
242Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
243Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
244Plasma-enhanced atomic layer deposition of tungsten nitride
245Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
246Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
247Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
248Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
249A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
250Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
251Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
252Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
253Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
254In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
255Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
256Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
257Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
258Atomic layer deposition of InN using trimethylindium and ammonia plasma
259Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
260Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
261Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
262Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
263Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
264Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
265AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
266Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition