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NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s).

NumberTitle
1Texture of atomic layer deposited ruthenium
2P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
3Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
4Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
5Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
6P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
7Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
8Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
9Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
10Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
11Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
12Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
13A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
14Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
15Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
16Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
17Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
18Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
19Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
20Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
21Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
22Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
23Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
24Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
25Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
26Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
27The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
28Plasma-Enhanced Atomic Layer Deposition of Ni
29Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
30Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
31Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
32Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
33Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
34Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
35High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
36Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
37Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
38Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
39Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
40Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
41Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
42Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
43Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
44Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
45Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
46A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
47Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
48Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
49Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
50Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
51Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
52Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
53Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
54In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
55Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
56PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
57823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
58Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
59Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
60In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
61High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
62The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
63Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
64Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
65Formation of aluminum nitride thin films as gate dielectrics on Si(100)
66Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
67Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
68Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
69Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
70Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
71Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
72Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
73Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
74Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
75Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
76Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
77PEALD AlN: controlling growth and film crystallinity
78Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
79Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
80Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
81Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
82Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
83Crystalline growth of AlN thin films by atomic layer deposition
84Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
85Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
86Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
87Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
88Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
89Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
90Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
91Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
92The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
93Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
94Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
95Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
96In-gap states in titanium dioxide and oxynitride atomic layer deposited films
97Atomic layer deposition of titanium nitride from TDMAT precursor
98Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
99Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
100Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
101Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
102Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
103Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
104Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
105Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
106Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
107Protective capping and surface passivation of III-V nanowires by atomic layer deposition
108A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
109Challenges in spacer process development for leading-edge high-k metal gate technology
110Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
111Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
112Tribological properties of thin films made by atomic layer deposition sliding against silicon
113Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
114Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
115Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
116Tribological properties of thin films made by atomic layer deposition sliding against silicon
117Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
118AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
119Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
120Atomic layer deposition of InN using trimethylindium and ammonia plasma
121Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
122Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
123Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
124In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
125Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
126Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
127Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
128Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
129Plasma-enhanced atomic layer deposition of tungsten nitride
130Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
131The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
132Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
133Ru thin film grown on TaN by plasma enhanced atomic layer deposition
134Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
135Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
136Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
137Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
138Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
139Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
140Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
141Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
142TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
143Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
144Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
145Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
146Ru thin film grown on TaN by plasma enhanced atomic layer deposition
147WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
148Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
149Atomic layer deposition of GaN at low temperatures
150Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
151Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
152Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
153Layer-by-layer epitaxial growth of GaN at low temperatures
154Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
155Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
156Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
157Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
158Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
159Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
160Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
161Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
162Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
163Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
164Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
165Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
166Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
167Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
168Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
169Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
170Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
171Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
172Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
173GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
174Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
175Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
176Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
177Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
178Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
179Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
180Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
181Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
182Plasma-enhanced ALD system for SRF cavity
183Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
184Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
185In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
186Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
187Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
188Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
189A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
190Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
191Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
192Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
193Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
194Formation of Ni silicide from atomic layer deposited Ni
195Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
196Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
197Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
198Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
199Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
200Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
201Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
202Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
203Trilayer Tunnel Selectors for Memristor Memory Cells
204Protective capping and surface passivation of III-V nanowires by atomic layer deposition
205Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
206The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
207Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
208Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
209Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
210A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
211Protective capping and surface passivation of III-V nanowires by atomic layer deposition
212Silicon surface passivation with atomic layer deposited aluminum nitride
213Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
214Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
215The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
216Texture of atomic layer deposited ruthenium
217Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
218Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
219The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
220Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
221Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
222Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
223Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
224Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
225Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
226Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
227A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
228Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
229The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
230TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
231Analysis of nitrogen species in titanium oxynitride ALD films
232Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
233Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
234Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
235A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
236High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
237Properties of AlN grown by plasma enhanced atomic layer deposition
238Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
239Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
240Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
241Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
242Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
243Self-Limiting Growth of GaN at Low Temperatures
244Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
245Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
246Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
247Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
248Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
249Tribological properties of thin films made by atomic layer deposition sliding against silicon
250Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
251Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
252AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
253Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
254Nitride passivation of the interface between high-k dielectrics and SiGe
255NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
256A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
257Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
258Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
259Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
260Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
261P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
262TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
263In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
264Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
265Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
266Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition