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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s).

NumberTitle
1Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
2823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
3Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
4Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
5Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
6Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
7Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
8Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
9Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
10Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
11Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
12Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
13Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
14Plasma-Enhanced Atomic Layer Deposition of Ni
15Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
16Atomic layer deposition of InN using trimethylindium and ammonia plasma
17In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
18Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
19Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
20Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
21Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
22Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
23Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
24Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
25Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
26Tribological properties of thin films made by atomic layer deposition sliding against silicon
27Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
28Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
29Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
30Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
31Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
32Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
33Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
34Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
35Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
36Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
37Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
38Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
39Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
40Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
41Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
42Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
43Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
44Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
45Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
46Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
47Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
48Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
49Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
50Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
51Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
52AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
53Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
54Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
55Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
56Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
57Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
58In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
59Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
60Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
61Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
62Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
63Ru thin film grown on TaN by plasma enhanced atomic layer deposition
64Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
65PEALD AlN: controlling growth and film crystallinity
66Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
67A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
68Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
69The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
70Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
71Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
72Crystalline growth of AlN thin films by atomic layer deposition
73Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
74Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
75Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
76Properties of AlN grown by plasma enhanced atomic layer deposition
77Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
78Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
79Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
80Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
81Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
82Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
83Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
84Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
85Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
86Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
87Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
88Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
89Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
90Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
91Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
92Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
93Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
94Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
95Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
96Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
97In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
98Texture of atomic layer deposited ruthenium
99Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
100Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
101Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
102In-gap states in titanium dioxide and oxynitride atomic layer deposited films
103Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
104Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
105In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
106Tribological properties of thin films made by atomic layer deposition sliding against silicon
107Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
108Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
109Texture of atomic layer deposited ruthenium
110GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
111Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
112Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
113Plasma-enhanced atomic layer deposition of tungsten nitride
114High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
115Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
116Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
117Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
118Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
119Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
120Silicon surface passivation with atomic layer deposited aluminum nitride
121Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
122Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
123A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
124Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
125Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
126TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
127Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
128PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
129Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
130Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
131Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
132Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
133Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
134Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
135Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
136A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
137Atomic layer deposition of GaN at low temperatures
138Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
139A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
140High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
141Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
142Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
143Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
144Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
145The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
146Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
147NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
148Tribological properties of thin films made by atomic layer deposition sliding against silicon
149Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
150Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
151Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
152Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
153In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
154Trilayer Tunnel Selectors for Memristor Memory Cells
155Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
156Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
157AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
158Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
159Plasma-enhanced ALD system for SRF cavity
160Analysis of nitrogen species in titanium oxynitride ALD films
161Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
162Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
163Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
164Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
165Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
166Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
167Ru thin film grown on TaN by plasma enhanced atomic layer deposition
168Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
169Self-Limiting Growth of GaN at Low Temperatures
170Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
171Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
172Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
173Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
174Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
175Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
176P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
177Protective capping and surface passivation of III-V nanowires by atomic layer deposition
178Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
179Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
180Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
181Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
182Formation of Ni silicide from atomic layer deposited Ni
183The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
184Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
185Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
186Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
187Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
188Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
189Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
190Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
191Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
192Challenges in spacer process development for leading-edge high-k metal gate technology
193Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
194Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
195Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
196Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
197Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
198The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
199Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
200Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
201Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
202Protective capping and surface passivation of III-V nanowires by atomic layer deposition
203Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
204Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
205Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
206Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
207Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
208The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
209Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
210Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
211Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
212Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
213Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
214The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
215Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
216Protective capping and surface passivation of III-V nanowires by atomic layer deposition
217Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
218P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
219Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
220Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
221Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
222P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
223Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
224Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
225TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
226Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
227Layer-by-layer epitaxial growth of GaN at low temperatures
228Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
229Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
230The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
231Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
232Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
233Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
234Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
235Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
236Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
237Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
238Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
239The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
240Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
241Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
242Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
243Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
244Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
245Atomic layer deposition of titanium nitride from TDMAT precursor
246A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
247A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
248Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
249TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
250Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
251Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
252Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
253A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
254Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
255Formation of aluminum nitride thin films as gate dielectrics on Si(100)
256Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
257WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
258Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
259Nitride passivation of the interface between high-k dielectrics and SiGe
260A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
261High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
262Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
263Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
264Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
265Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
266Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion