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Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 12, PP. 1277-1280, 2015
Date:
2015-10-01
DOI:
http://dx.doi.org/10.1109/LED.2015.2486771

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
Minh Thien Huu HaNational Chiao Tung University
Chenming Calvin HuUniversity of California - Berkeley
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

InGaAs

Notes

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