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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf, CAS# 352535-01-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 88 record(s).

NumberTitle
1Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
2Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
3The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
4The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
5Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
6Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
7Trapped charge densities in Al2O3-based silicon surface passivation layers
8Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
9Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
10Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
11Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
12Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
13Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
14Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
15Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
16Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
17Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
18Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
19HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
20Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
21Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
22Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
23Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
24Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
25Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
26Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
27Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
28An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
29Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
30Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
31Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
32Optical properties and bandgap evolution of ALD HfSiOx films
33Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
34Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
35Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
36Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
37Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
38Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
39Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
40Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
41Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
42Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
43On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
44Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
45Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
46Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
47Symmetrical Al2O3-based passivation layers for p- and n-type silicon
48Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
49Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
50Breakdown and Protection of ALD Moisture Barrier Thin Films
51Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
52Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
53The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
54In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
55Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
56Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
57Sub-10-nm ferroelectric Gd-doped HfO2 layers
58Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
59Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
60Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
61Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
62Ferroelectricity in hafnia controlled via surface electrochemical state
63Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
64Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
65Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
66Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
67Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
68Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
69The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
70Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
71Optical properties and bandgap evolution of ALD HfSiOx films
72Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
73Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
74Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
75A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
76Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
77Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
78Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
79Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
80Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
81Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
82Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
83Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
84Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
85Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
86Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
87Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
88Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode