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Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Scientific Reports 9, Article number: 10438 (2019)
Date:
2019-07-18
DOI:
https://doi.org/10.1038/s41598-019-47049-z

Author Information

Name Institution
Min LiNanjing University
Zhi-Xian JinNanjing University
Wei ZhangNanjing University
Yu-Hang BaiNanjing University
Yanqiang CaoNanjing University
Wei-Ming LiNanjing University
Di WuNanjing University
Aidong LiNanjing University

Films

Thermal TiO2

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma TiO2

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal ZrO2

Hardware used: Picosun R200
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma ZrO2

Hardware used: Picosun R200
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research Cypher AFM

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Characteristic: Electrochemical Performance
Analysis: EIS, Electrochemical Impedance Spectroscopy
Diagnostic: CH Instruments, CHI604E

Characteristic: Electrochemical Performance
Analysis: Linear Sweep Voltammetry
Diagnostic: CH Instruments, CHI604E

Substrates

Si(100)

Notes

1660