| 1 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| 2 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 3 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 4 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 5 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 6 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 7 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 8 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 9 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 10 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 11 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 12 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 13 | Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon |
| 14 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 15 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 16 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 17 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |
| 18 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 19 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 20 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
| 21 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 22 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 23 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 24 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 25 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 26 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 27 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 28 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 29 | Single-Cell Photonic Nanocavity Probes |
| 30 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 31 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 32 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 33 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
| 34 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 35 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 36 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 37 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 38 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
| 39 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 40 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 41 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
| 42 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 43 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 44 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 45 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
| 46 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 47 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
| 48 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 49 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 50 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 51 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 52 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
| 53 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 54 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 55 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 56 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 57 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 58 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
