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ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition

Type:
Journal
Info:
Surface Review and Letters, vol. 12, no. 2, (2005) 215-219
Date:
2005-02-15
DOI:
http://dx.doi.org/10.1142/S0218625X05006962

Author Information

Name Institution
Youngjo TakPohang University of Science and Technology (POSTECH)
Kijung YongPohang University of Science and Technology (POSTECH)

Films

Plasma ZrO2

Hardware used: Unknown
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiC
Nanowire

Notes

1259