ZrTB, Zr[OC(Me)₃]₄, Zr[OC(CH₃)₃]₄, Zirconium tetra-tert-butoxide, CAS# 2081-12-1

Your search for publications using this chemistry returned 4 record(s).

Number	Title
1	ZrO₂ Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
2	ZrO₂-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
3	Characteristics of ZrO₂ gate dielectric deposited using Zr(t –butoxide) and Zr(NEt₂)₄ precursors by plasma enhanced atomic layer deposition method
4	Plasma enhanced atomic layer deposition of HfO₂ and ZrO₂ high-k thin films

ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide, CAS# 2081-12-1