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Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. A 23(3), May/Jun 2005
Date:
2005-05-01
DOI:
http://dx.doi.org/10.1116/1.1894666

Author Information

Name Institution
Sandy X. LaoUniversity of California - Los Angeles (UCLA)
Ryan M. MartinUniversity of California - Los Angeles (UCLA)
Jane P. ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma HfO2

Hardware used: Custom
HfTB, Hf[OC(Me)3]4, Hf[OC(CH3)3]4, Hafnium tetra-tert-butoxide
CAS#: 2172-02-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZrO2

Hardware used: Custom
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics MC2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Spectrophotometry
Diagnostic: SCI FilmTek 1500 Spectrophotometer

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Thermo Nicolet Nexus 640

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Thermo Nicolet Nexus 640

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments MM AFM-2

Characteristic: Thermal Stability
Analysis: Anneal
Diagnostic: Blue M SW-11TA

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284B LCR

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284B LCR

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284B LCR

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284B LCR

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284B LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

Silicon samples DI rinsed and HF cleaned.
Deposition temperature not mentioned. Cold wall reactor. Perhaps related to high ZrO2 GPC.
Results compared to PECVD results from their earlier publication.
Some samples annealed at 250C in air.
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