About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

HfTB, Hf[OC(Me)3]4, Hf[OC(CH3)3]4, Hafnium tetra-tert-butoxide, CAS# 2172-02-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 3 record(s).

NumberTitle
1Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
2Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
3Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition