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ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method

Type:
Journal
Info:
Japanese Journal of Applied Physics 41, 3043--3046 (2002)
Date:
2001-11-01
DOI:
http://dx.doi.org/10.1143/jjap.41.3043

Author Information

Name Institution
Jaehyoung KooHanyang University
Yangdo KimHanyang University
Hyeongtag JeonHanyang University

Films

Thermal ZrO2

Hardware used: Custom
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma ZrO2

Hardware used: Custom
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1232