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Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002
Date:
2002-11-01
DOI:
http://dx.doi.org/10.1063/1.1513196

Author Information

Name Institution
Yangdo KimHanyang University
Jaehyoung KooHanyang University
Jiwoong HanHanyang University
Sungwoo ChoiHanyang University
Hyeongtag JeonHanyang University
Chan Gyung ParkHanyang University

Films

Thermal ZrO2

Hardware used: Custom
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZrO2

Hardware used: Custom
ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide
CAS#: 2081-12-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal ZrO2

Hardware used: Custom
TDEAZr, tetrakis(diethylamido)zirconium, zirconium diethylamide, (Et2N)4Zr
CAS#: 13801-49-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZrO2

Hardware used: Custom
TDEAZr, tetrakis(diethylamido)zirconium, zirconium diethylamide, (Et2N)4Zr
CAS#: 13801-49-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)
SiOxNy

Notes

Si(100) substrates received pirahna and HF cleans
SiOxNy substrates only received pirahna clean.
ZrO2 films received 800C RTA for 10s in N2.
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