About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Type:
Journal
Info:
Journal of Applied Physics 116, 024508 (2014)
Date:
2014-06-02
DOI:
http://dx.doi.org/10.1063/1.4889798

Author Information

Name Institution
Nasir AlimardaniOregon State University
Sean W. KingIntel Corporation
Benjamin L. FrenchIntel Corporation
Cheng TanOregon State University
Benjamin P. LampertOregon State University
John F. Conley, Jr.Oregon State University

Films

Thermal Nb2O5

Hardware used: Picosun SUNALE R-150B
Niobium Ethoxide, Nb(OC2H5)5, Nb(OEt)5
CAS#: 3236-82-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal Ta2O5

Hardware used: Picosun SUNALE R-150B
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal ZrO2

Hardware used: Picosun SUNALE R-150B
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Picosun SUNALE R-150B
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: I-V Plots
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4156B

Characteristic: Band Defects
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

ZCAN (ZrCuAlNi)

Notes

No annealing to avoid crystallization of ALD films or ZCAN substrate.
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