| 1 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
| 2 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 3 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 4 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 5 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
| 6 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 7 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 8 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
| 9 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
| 10 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
| 11 | Single-Cell Photonic Nanocavity Probes |
| 12 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
| 13 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 14 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 15 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 16 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 17 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 18 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 19 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 20 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 21 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 22 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 23 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 24 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 25 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 26 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 27 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 28 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 29 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 30 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 31 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 32 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 33 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
| 34 | High-Reflective Coatings For Ground and Space Based Applications |
| 35 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 36 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 37 | Comparative study of ALD SiO2 thin films for optical applications |
| 38 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 39 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 40 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 41 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 42 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 43 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 44 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 45 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| 46 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 47 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 48 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
| 49 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
| 50 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 51 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 52 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 53 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
| 54 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
| 55 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 56 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
| 57 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 58 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 59 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 60 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 61 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 62 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 63 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 64 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 65 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 66 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 67 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 68 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 69 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
| 70 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 71 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
