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Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3

Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 071101 (2017)
Date:
2017-05-08
DOI:
https://doi.org/10.7567/JJAP.56.071101

Author Information

Name Institution
Patrick H. Carey IVUniversity of Florida
Fan RenUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida
Soohwan JangDankook University
A. KuramataTamura Corporation

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5100 ESCA

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

Ga2O3
Quartz

Notes

1070