About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

HfSiOx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfSiOx films returned 16 record(s).

NumberTitle
1Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
2Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
3TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
4Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
5Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
6Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
7Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
8Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
9The effects of layering in ferroelectric Si-doped HfO2 thin films
10Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
11Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
12High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
13Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
14Annealing behavior of ferroelectric Si-doped HfO2 thin films
15Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
16Optical properties and bandgap evolution of ALD HfSiOx films