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Annealing behavior of ferroelectric Si-doped HfO2 thin films

Type:
Journal
Info:
Thin Solid Films 615 (2016) 139 - 144
Date:
2016-07-05
DOI:
http://dx.doi.org/10.1016/j.tsf.2016.07.009

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Qanit TakmeelUniversity of Florida
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Hysteresis
Analysis: -
Diagnostic: -

Characteristic: Polarization
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(100)
TiN

Notes

841