TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me₂N)₄Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s).

Number	Title
1	Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
2	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3	Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
4	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
5	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
6	Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
7	The effects of layering in ferroelectric Si-doped HfO2 thin films
8	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
9	Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
10	Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
11	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
12	Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
13	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
14	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
15	Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
16	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
17	Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
18	Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
19	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
20	Nonvolatile Capacitive Crossbar Array for In-Memory Computing
21	Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
22	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
23	Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
24	Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
25	ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
26	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
27	Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
28	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
29	Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
30	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
31	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
32	Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
33	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
34	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
35	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
36	Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
37	Damage evaluation in graphene underlying atomic layer deposition dielectrics
38	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
39	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
40	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
41	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
42	Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
43	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
44	Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
45	Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
46	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
47	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
48	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
49	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
50	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
51	Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
52	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
53	Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
54	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
55	Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
56	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
57	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
58	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
59	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
60	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
61	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
62	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
63	Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
64	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
65	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
66	On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
67	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
68	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
69	Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
70	Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
71	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
72	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
73	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
74	Annealing behavior of ferroelectric Si-doped HfO2 thin films
75	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides