About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s).

NumberTitle
1Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
2Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
3Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
4Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
5Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
6Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
7Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
8Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
9Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
10Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
11Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
12Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
13Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
14Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
15Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
16HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
17Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
18High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
19In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
20The effects of layering in ferroelectric Si-doped HfO2 thin films
21Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
22Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
23Damage evaluation in graphene underlying atomic layer deposition dielectrics
24Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
25Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
26Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
27Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
28Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
29Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
30Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
31Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
32Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
33Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
34Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
35Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
36Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
37Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
38AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
39Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
40Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
41Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
42ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
43Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
44TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
45A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
46Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
47Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
48Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
49A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
50Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
51Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
52HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
53Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
54Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
55HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
56Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
57Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
58Nonvolatile Capacitive Crossbar Array for In-Memory Computing
59Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
60Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
61Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
62Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
63Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
64Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
65Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
66The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
67Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
68Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
69Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
70Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
71Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
72Annealing behavior of ferroelectric Si-doped HfO2 thin films
73On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
74The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
75A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors