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High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 222103 (2014)
Date:
2014-11-18
DOI:
http://dx.doi.org/10.1063/1.4903068

Author Information

Name Institution
Michael BarthThe Pennsylvania State University
G. Bruce Rayner, Jr.Kurt J. Lesker Company
Stephen McDonnellUniversity of Texas at Dallas
Robert M. WallaceUniversity of Texas at Dallas
Brian R. BennettU.S. Naval Research Laboratory
Roman Engel-HerbertThe Pennsylvania State University
Suman DattaThe Pennsylvania State University

Films

Other HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan 3

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Interfacial Layer
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

GaSb

Notes

GaSb substrates cleaned with acetone and IPA. Then HCl was used for native oxide removal.
Prior to HfO2 deposition, 10 cylces of TMA followed by 10 cycles of water was used to ensure hydroxylation of surface.
In situ forming gas anneal at 350C with 40sccm H2 and 110 sccm Ar.
Prior to thermal HfO2 deposition, the substrate surface was prepared with H2 plasma.
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