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A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

Type:
Journal
Info:
Applied Physics Letters 109, 223501 (2016)
Date:
2016-11-01
DOI:
http://dx.doi.org/10.1063/1.4971188

Author Information

Name Institution
Cheng-Chih HsiehUniversity of Texas at Austin
Anupam RoyUniversity of Texas at Austin
Yao-Feng ChangUniversity of Texas at Austin
Davood ShahrjerdiNew York University
Sanjay K. BanerjeeUniversity of Texas at Austin

Films

Plasma HfO2

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Memristor Characteristics
Analysis: Memristor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Etch Rate
Analysis: -
Diagnostic: -

Substrates

CeOx

Notes

778