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Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications

Type:
Journal
Info:
Thin Solid Films (2015)
Date:
2015-11-16
DOI:
http://dx.doi.org/10.1016/j.tsf.2015.11.037

Author Information

Name Institution
Raffaella Lo NigroNational Research Council (CNR - Italy)
Emanuela SchiliròNational Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma HfO2

Hardware used: SENTECH
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon

Notes

499