Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
Type:
Journal
Info:
Applied Physics Letters 119, 042901 (2021)
Date:
2021-07-14
Author Information
| Name | Institution |
|---|---|
| Subhajit Mohanty | University of Michigan |
| Islam Sayed | University of California - Santa Barbara (UCSB) |
| Zhe (Ashley) Jian | University of Michigan |
| Umesh Mishra | University of Michigan |
| Elaheh Ahmadi | University of Michigan |
Films
Thermal HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 1630 |