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Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (4) H267-H271 (2008)
Date:
2008-01-08
DOI:
http://dx.doi.org/10.1149/1.2840616

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfON

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

Si(001)
Si(111)
Si(011)

Notes

1338